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Vina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753

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Reference TypeJournal (article/letter/editorial)
TitleAlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsVina, L.Author
Wang, W. I.Author
Year1986 (January 6)Volume48
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.96753Search in ResearchGate
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Mindat Ref. ID8476945Long-form Identifiermindat:1:5:8476945:3
GUID0
Full ReferenceVina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753
Plain TextVina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753
In(1986, January) Applied Physics Letters Vol. 48 (1) AIP Publishing

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Wang, W. I., Marks, R. F., Vina, L. (1986) High‐purity GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 59 (3). 937-939 doi:10.1063/1.336566
Wang, W. I. (1982) Mobility enhancement in modulation‐doped GaAs/AlAs heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 41 (6). 540-542 doi:10.1063/1.93582
Qian, Q‐D., Melloch, M. R., Cooper, J. A. (1986) Photosensitive capacitance‐voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures. Applied Physics Letters, 48 (10). 638-640 doi:10.1063/1.96729
Ishikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347
Ballingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001
Dawson, P., Woodbridge, K. (1984) Effects of prelayers on minority‐carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 45 (11). 1227-1229 doi:10.1063/1.95107
Chand, Naresh, Chu, S. N. G. (1990) Origin and improvement of interface roughness in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 57 (17). 1796-1798 doi:10.1063/1.104025
Aina, Leye, Mattingly, Mike, Pande, Krishna (1986) Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 49 (14). 865-867 doi:10.1063/1.97633
Hsu, C., Sivananthan, S., Chu, X., Faurie, J. P. (1986) Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Applied Physics Letters, 48 (14). 908-910 doi:10.1063/1.96654
Matteson, S., Shih, H. D. (1986) Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 47-49 doi:10.1063/1.96757
Wu, Yao‐Hwa, Werner, Michael, Wang, Shyh (1984) Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 45 (6). 606-608 doi:10.1063/1.95326
 
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