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Ballingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001

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Reference TypeJournal (article/letter/editorial)
Title(100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsBallingall, J. M.Author
Wroge, M. L.Author
Leopold, D. J.Author
Year1986 (May 12)Volume48
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97001Search in ResearchGate
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Mindat Ref. ID8477462Long-form Identifiermindat:1:5:8477462:2
GUID0
Full ReferenceBallingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001
Plain TextBallingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001
In(1986, May) Applied Physics Letters Vol. 48 (19) AIP Publishing

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Ballingall, J. M., Leopold, D. J., Wroge, M. L., Peterman, D. J., Morris, B. J., Broerman, J. G. (1986) HgTeā€CdTe superlattices grown on GaAsā€‰(100) oriented substrates by molecular beam epitaxy. Applied Physics Letters, 49 (14). 871-873 doi:10.1063/1.97520
Leopold, D. J., Ballingall, J. M., Wroge, M. L. (1986) Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 49 (21). 1473-1474 doi:10.1063/1.97624
Han, Heā€Xiang, Feldman, Bernard J., Wroge, M. L., Leopold, D. J., Ballingall, J. M. (1987) Deepā€level photoluminescence spectroscopy of CdTe grown by molecularā€beam epitaxy. Journal of Applied Physics, 61 (7). 2670-2671 doi:10.1063/1.337898
Ballingall, J. M., Morris, B. J., Leopold, D. J., Rode, D. L. (1986) Silicon autocompensation in GaAs grown by molecularā€beam epitaxy. Journal of Applied Physics, 59 (10). 3571-3573 doi:10.1063/1.336780
Hsu, C., Sivananthan, S., Chu, X., Faurie, J. P. (1986) Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy. Applied Physics Letters, 48 (14). 908-910 doi:10.1063/1.96654
Ballingall, J. M., Leopold, D. J., Peterman, D. J. (1985) HgTeā€CdTeā€InSb heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (3). 262-264 doi:10.1063/1.96185
Reno, J. L., Carr, M. J., Gourley, P. L. (1990) Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecularā€beam epitaxy. Journal of Applied Physics, 67 (9). 4114-4117 doi:10.1063/1.344971
Ballingall, J. M., Takei, W. J., Feldman, Bernard J. (1985) Low defect density CdTe(111)ā€GaAs(001) heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (6). 599-601 doi:10.1063/1.96084
Rauhala, E., Keinonen, J., Rakennus, K., Pessa, M. (1987) Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100). Applied Physics Letters, 51 (13). 973-974 doi:10.1063/1.98780
Reno, J. L., Gourley, P. L., Monfroy, G., Faurie, J. P. (1988) Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100). Applied Physics Letters, 53 (18). 1747-1749 doi:10.1063/1.99777
Tatsuoka, H., Kuwabara, H., Nakanishi, Y., Fujiyasu, H. (1990) CdTe (111)B growth on oriented and misoriented GaAs (100) grown by hotā€wall epitaxy. Journal of Applied Physics, 68 (9). 4592-4597 doi:10.1063/1.346167
 
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