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Ballingall, J. M., Takei, W. J., Feldman, Bernard J. (1985) Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (6). 599-601 doi:10.1063/1.96084

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Reference TypeJournal (article/letter/editorial)
TitleLow defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsBallingall, J. M.Author
Takei, W. J.Author
Feldman, Bernard J.Author
Year1985 (September 15)Volume47
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.96084Search in ResearchGate
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Mindat Ref. ID8476616Long-form Identifiermindat:1:5:8476616:4
GUID0
Full ReferenceBallingall, J. M., Takei, W. J., Feldman, Bernard J. (1985) Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (6). 599-601 doi:10.1063/1.96084
Plain TextBallingall, J. M., Takei, W. J., Feldman, Bernard J. (1985) Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (6). 599-601 doi:10.1063/1.96084
In(1985, September) Applied Physics Letters Vol. 47 (6) AIP Publishing

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Ballingall, J. M., Leopold, D. J., Peterman, D. J. (1985) HgTe‐CdTe‐InSb heterostructures by molecular beam epitaxy. Applied Physics Letters, 47 (3). 262-264 doi:10.1063/1.96185
Ballingall, J. M., Wroge, M. L., Leopold, D. J. (1986) (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy. Applied Physics Letters, 48 (19). 1273-1275 doi:10.1063/1.97001
Han, He‐Xiang, Feldman, Bernard J., Wroge, M. L., Leopold, D. J., Ballingall, J. M. (1987) Deep‐level photoluminescence spectroscopy of CdTe grown by molecular‐beam epitaxy. Journal of Applied Physics, 61 (7). 2670-2671 doi:10.1063/1.337898
Leopold, D. J., Ballingall, J. M., Wroge, M. L. (1986) Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 49 (21). 1473-1474 doi:10.1063/1.97624
Feng, Z. C., Mascarenhas, A., Choyke, W. J., Farrow, R. F. C., Shirland, F. A., Takei, W. J. (1985) A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates. Applied Physics Letters, 47 (1). 24-25 doi:10.1063/1.96420
Ballingall, J. M., Leopold, D. J., Wroge, M. L., Peterman, D. J., Morris, B. J., Broerman, J. G. (1986) HgTe‐CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy. Applied Physics Letters, 49 (14). 871-873 doi:10.1063/1.97520
Ballingall, J. M., Morris, B. J., Leopold, D. J., Rode, D. L. (1986) Silicon autocompensation in GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 59 (10). 3571-3573 doi:10.1063/1.336780
Vina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753
Songpongs, P., Andersson, T. G., Ekenstedt, M. J., Söderström, J. R., Cumming, M. M. (1994) Hall measurements on selectively doped InSb heterostructures grown by molecular beam epitaxy on GaAs (001). Applied Physics Letters, 65 (11). 1433-1435 doi:10.1063/1.112007
Wu, B. J., Haugen, G. M., DePuydt, J. M., Kuo, L. H., Salamanca‐Riba, L. (1996) Molecular beam epitaxy of low defect density (⩽1×104 cm−2) ZnSSe on GaAs. Applied Physics Letters, 68 (20). 2828-2830 doi:10.1063/1.116338
Chu, X., Sivananthan, S., Faurie, J. P. (1987) Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 597-599 doi:10.1063/1.98092
 
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