Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Ploog, Klaus, Fischer, Albrecht (1986) High‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy. Applied Physics Letters, 48 (20). 1392-1394 doi:10.1063/1.96919

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHigh‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsPloog, KlausAuthor
Fischer, AlbrechtAuthor
Year1986 (May 19)Volume48
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.96919Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477592Long-form Identifiermindat:1:5:8477592:2
GUID0
Full ReferencePloog, Klaus, Fischer, Albrecht (1986) High‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy. Applied Physics Letters, 48 (20). 1392-1394 doi:10.1063/1.96919
Plain TextPloog, Klaus, Fischer, Albrecht (1986) High‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy. Applied Physics Letters, 48 (20). 1392-1394 doi:10.1063/1.96919
In(1986, May) Applied Physics Letters Vol. 48 (20) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Fronius, H., Fischer, A., Ploog, K. (1987) Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by MBE. Journal of Crystal Growth, 81 (1). 169-174 doi:10.1016/0022-0248(87)90386-1
Ploog, K., Fronius, H., Fischer, A. (1987) Improved electron mobility by AlAs spacer in one‐sided selectively doped AlxGa1−xAs/GaAs multiple quantum well heterostructures. Applied Physics Letters, 50 (18). 1237-1239 doi:10.1063/1.97920
Drummond, T. J., Fischer, R., Morkoç, H., Miller, P. (1982) Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 40 (5). 430-432 doi:10.1063/1.93096
Theis, T. N., Wright, S. L. (1986) Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions. Applied Physics Letters, 48 (20). 1374-1376 doi:10.1063/1.97028
Horikoshi, Yoshiji, Fischer, Albrecht, Schubert, Erdman F., Ploog, Klaus (1987) High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric AlxGa1-xAs/GaAs/AlyGa1-yAs Quantum Wells. Japanese Journal of Applied Physics, 26. 263-266 doi:10.1143/jjap.26.263
Giannini, C., Gerardi, C., Tapfer, L., Fischer, A., Ploog, K. H. (1993) Carbon incorporation in GaAs and AlxGa1−xAs layers grown by molecular‐beam epitaxy. Journal of Applied Physics, 74 (1). 77-81 doi:10.1063/1.355200
Ishikawa, Tomonori, Maeda, Takeshi, Kondo, Kazuo (1988) Selectively Se‐doped AlGaAs/GaAs heterostructures with reducedDXcenter concentrations grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1926-1927 doi:10.1063/1.100347
Tsang, W. T. (1979) Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 34 (7). 473-475 doi:10.1063/1.90839
Schubert, E F, Knecht, J, Ploog, K (1985) Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures. Journal of Physics C: Solid State Physics, 18 (9). doi:10.1088/0022-3719/18/9/007
Vina, L., Wang, W. I. (1986) AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 36-37 doi:10.1063/1.96753
Drummond, T. J., Morkoç, H., Hess, K., Cho, A. Y. (1981) Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy. Journal of Applied Physics, 52 (8). 5231-5234 doi:10.1063/1.329426
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 21, 2025 16:14:16
Go to top of page