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Tung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702

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Reference TypeJournal (article/letter/editorial)
TitleControl of epitaxial orientation of Si on CoSi2(111)
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Batstone, J. L.Author
Year1988 (May 9)Volume52
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.99702Search in ResearchGate
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Mindat Ref. ID8483010Long-form Identifiermindat:1:5:8483010:4
GUID0
Full ReferenceTung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702
Plain TextTung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702
In(1988, May) Applied Physics Letters Vol. 52 (19) AIP Publishing

See Also

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Tung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
Batstone, J. L., Gibson, J. M., Tung, R. T., Levi, A. F. J. (1988) ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Applied Physics Letters, 52 (10). 828-830 doi:10.1063/1.99297
d’Anterroches, Cecile, Yakupoglu, H. Nejat, Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1988) Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique. Applied Physics Letters, 52 (6). 434-436 doi:10.1063/1.99434
Gibson, J. M., Batstone, J. L., Tung, R. T. (1987) Insitustudy of the molecular beam epitaxy of CoSi2on (111) Si by transmission electron microscopy and diffraction. Applied Physics Letters, 51 (1). 45-47 doi:10.1063/1.98882
Flohr, Th., Schulz, M., Tung, R. T. (1987) Infrared absorption of epitaxial NiSi2layers on Si(111). Applied Physics Letters, 51 (17). 1343-1345 doi:10.1063/1.98673
Yalisove, S. M., Eaglesham, D. J., Tung, R. T. (1989) Single‐crystal growth of CoSi2 (110) on Si (110). Applied Physics Letters, 55 (20). 2075-2077 doi:10.1063/1.102110
Tung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
Phillips, Julia M., Batstone, J. L., Hensel, J. C., Cerullo, M. (1987) Electrical and structural characterization of ultrathin epitaxial CoSi2on Si(111). Applied Physics Letters, 51 (23). 1895-1897 doi:10.1063/1.98504
Ospelt, M., Henz, J., Flepp, L., von Känel, H. (1988) Schottky barriers of epitaxial NiSi2on Si(111). Applied Physics Letters, 52 (3). 227-229 doi:10.1063/1.99527
Hensel, J. C., Levi, A. F. J., Tung, R. T., Gibson, J. M. (1985) Transistor action in Si/CoSi2/Si heterostructures. Applied Physics Letters, 47 (2). 151-153 doi:10.1063/1.96245
Lin, T. L., Fathauer, R. W., Grunthaner, P. J., d’Anterroches, C. (1988) Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2on Si (111). Applied Physics Letters, 52 (10). 804-806 doi:10.1063/1.99289
 
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