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Tung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of epitaxial NiSi2on Si(111) at room temperature
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Schrey, F.Author
Year1989 (July 17)Volume55
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.102385Search in ResearchGate
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Mindat Ref. ID8489059Long-form Identifiermindat:1:5:8489059:5
GUID0
Full ReferenceTung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
Plain TextTung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
In(1989, July) Applied Physics Letters Vol. 55 (3) AIP Publishing

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Tung, R. T., Schrey, F., Yalisove, S. M. (1989) Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature. Applied Physics Letters, 55 (19). 2005-2007 doi:10.1063/1.102338
Tung, R. T., Schrey, F. (1989) Molecular beam epitaxy growth of CoSi2at room temperature. Applied Physics Letters, 54 (9). 852-854 doi:10.1063/1.101416
Tung, R.T., Schrey, F. (1989) Growth of single crystal CoSi2 layers at room temperature. Journal of Crystal Growth, 95 (1). 455-460 doi:10.1016/0022-0248(89)90441-7
Tung, R. T., Schrey, F. (1989) Topography of the Si(111) surface during silicon molecular-beam epitaxy. Physical Review Letters, 63 (12). 1277-1280 doi:10.1103/physrevlett.63.1277
Ospelt, M., Henz, J., Flepp, L., von Känel, H. (1988) Schottky barriers of epitaxial NiSi2on Si(111). Applied Physics Letters, 52 (3). 227-229 doi:10.1063/1.99527
Fathauer, R. W., Nieh, C. W., Xiao, Q. F., Hashimoto, Shin (1989) Growth of single‐crystal columns of CoSi2embedded in epitaxial Si on Si(111) by molecular beam epitaxy. Applied Physics Letters, 55 (3). 247-249 doi:10.1063/1.102383
Tung, R.T., Schrey, F. (1990) Epitaxial CoSi2/Si(111) interfaces. Applied Surface Science, 41. 223-229 doi:10.1016/0169-4332(89)90061-5
Lin, T. L., Fathauer, R. W., Grunthaner, P. J., d’Anterroches, C. (1988) Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2on Si (111). Applied Physics Letters, 52 (10). 804-806 doi:10.1063/1.99289
Asano, Tanemasa, Ishiwara, Hiroshi (1984) Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature. Journal of Applied Physics, 55 (10). 3566-3570 doi:10.1063/1.332947
Yalisove, S. M., Eaglesham, D. J., Tung, R. T. (1989) Single‐crystal growth of CoSi2 (110) on Si (110). Applied Physics Letters, 55 (20). 2075-2077 doi:10.1063/1.102110
Tung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702
 
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