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Tung, R. T., Schrey, F., Yalisove, S. M. (1989) Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature. Applied Physics Letters, 55 (19). 2005-2007 doi:10.1063/1.102338

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Reference TypeJournal (article/letter/editorial)
TitleHomoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Schrey, F.Author
Yalisove, S. M.Author
Year1989 (November 6)Volume55
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.102338Search in ResearchGate
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Mindat Ref. ID8488429Long-form Identifiermindat:1:5:8488429:3
GUID0
Full ReferenceTung, R. T., Schrey, F., Yalisove, S. M. (1989) Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature. Applied Physics Letters, 55 (19). 2005-2007 doi:10.1063/1.102338
Plain TextTung, R. T., Schrey, F., Yalisove, S. M. (1989) Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature. Applied Physics Letters, 55 (19). 2005-2007 doi:10.1063/1.102338
In(1989, November) Applied Physics Letters Vol. 55 (19) AIP Publishing

See Also

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Tung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
Tung, R. T., Schrey, F. (1989) Molecular beam epitaxy growth of CoSi2at room temperature. Applied Physics Letters, 54 (9). 852-854 doi:10.1063/1.101416
Yalisove, S. M., Eaglesham, D. J., Tung, R. T. (1989) Single‐crystal growth of CoSi2 (110) on Si (110). Applied Physics Letters, 55 (20). 2075-2077 doi:10.1063/1.102110
Tung, R.T., Schrey, F. (1989) Growth of single crystal CoSi2 layers at room temperature. Journal of Crystal Growth, 95 (1). 455-460 doi:10.1016/0022-0248(89)90441-7
Adams, D. P., Yalisove, S. M. (1994) Low‐temperature homoepitaxial growth on nonplanar Si substrates. Journal of Applied Physics, 76 (9). 5185-5189 doi:10.1063/1.357236
Hensel, J. C., Tung, R. T., Poate, J. M., Unterwald, F. C. (1984) Electrical transport properties of CoSi2and NiSi2thin films. Applied Physics Letters, 44 (9). 913-915 doi:10.1063/1.94932
Nason, T. C., You, L., Lu, T.‐M. (1992) Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films. Applied Physics Letters, 60 (2). 174-176 doi:10.1063/1.106983
Sullivan, J. P., Tung, R. T., Schrey, F. (1992) Control of interfacial morphology: NiSi2/Si(100). Journal of Applied Physics, 72 (2). 478-489 doi:10.1063/1.351878
Adams, D. P., Yalisove, S. M., Eaglesham, D. J. (1993) Effect of hydrogen on surface roughening during Si homoepitaxial growth. Applied Physics Letters, 63 (26). 3571-3573 doi:10.1063/1.110100
Tung, R. T., Schrey, F. (1995) Increased uniformity and thermal stability of CoSi2 thin films by Ti capping. Applied Physics Letters, 67 (15). 2164-2166 doi:10.1063/1.114754
Tung, R. T., Eaglesham, D. J., Schrey, F., Sullivan, J. P. (1993) Single‐crystal Si/NiSi2/Si(100) structures. Journal of Applied Physics, 73 (12). 8250-8257 doi:10.1063/1.353443
 
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