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Tung, R. T., Schrey, F. (1989) Molecular beam epitaxy growth of CoSi2at room temperature. Applied Physics Letters, 54 (9). 852-854 doi:10.1063/1.101416

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxy growth of CoSi2at room temperature
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Schrey, F.Author
Year1989 (February 27)Volume54
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.101416Search in ResearchGate
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Mindat Ref. ID8487635Long-form Identifiermindat:1:5:8487635:5
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Full ReferenceTung, R. T., Schrey, F. (1989) Molecular beam epitaxy growth of CoSi2at room temperature. Applied Physics Letters, 54 (9). 852-854 doi:10.1063/1.101416
Plain TextTung, R. T., Schrey, F. (1989) Molecular beam epitaxy growth of CoSi2at room temperature. Applied Physics Letters, 54 (9). 852-854 doi:10.1063/1.101416
In(1989, February) Applied Physics Letters Vol. 54 (9) AIP Publishing

See Also

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Tung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
Tung, R. T., Schrey, F., Yalisove, S. M. (1989) Homoepitaxial growth of CoSi2and NiSi2on (100) and (110) surfaces at room temperature. Applied Physics Letters, 55 (19). 2005-2007 doi:10.1063/1.102338
Tung, R. T., Schrey, F. (1989) Topography of the Si(111) surface during silicon molecular-beam epitaxy. Physical Review Letters, 63 (12). 1277-1280 doi:10.1103/physrevlett.63.1277
Tung, R.T., Schrey, F. (1989) Growth of single crystal CoSi2 layers at room temperature. Journal of Crystal Growth, 95 (1). 455-460 doi:10.1016/0022-0248(89)90441-7
Chou, Y. C., Lee, C. T., Juang, F. Y., Chang, C. C., Chou, K. (1989) Growth flux ratio dependence of microwave devices in molecular beam epitaxy. Applied Physics Letters, 54 (21). 2109-2111 doi:10.1063/1.101143
Davis, John L., Thompson, Phillip E. (1989) Molecular beam epitaxy growth of InSb films on GaAs. Applied Physics Letters, 54 (22). 2235-2237 doi:10.1063/1.101134
Sugiura, H., Iga, R., Yamada, T., Yamaguchi, M. (1989) Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 54 (4). 335-337 doi:10.1063/1.100962
Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
Cammack, D. A., Shahzad, K., Marshall, T. (1990) Low‐temperature growth of ZnSe by molecular beam epitaxy using cracked selenium. Applied Physics Letters, 56 (9). 845-847 doi:10.1063/1.102680
Chiang, T. Y., Yiin, D. H., Liu, E. H., Yew, T. R. (1993) Low‐temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy. Applied Physics Letters, 62 (9). 985-987 doi:10.1063/1.108508
Tung, R. T., Schrey, F. (1995) Increased uniformity and thermal stability of CoSi2 thin films by Ti capping. Applied Physics Letters, 67 (15). 2164-2166 doi:10.1063/1.114754
 
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