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Tung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393

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Reference TypeJournal (article/letter/editorial)
TitleControl of pinholes in epitaxial CoSi2layers on Si(111)
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Batstone, J. L.Author
Year1988 (February 22)Volume52
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99393Search in ResearchGate
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Mindat Ref. ID8483872Long-form Identifiermindat:1:5:8483872:6
GUID0
Full ReferenceTung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
Plain TextTung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
In(1988, February) Applied Physics Letters Vol. 52 (8) AIP Publishing

See Also

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Tung, R. T., Batstone, J. L. (1988) Control of epitaxial orientation of Si on CoSi2(111). Applied Physics Letters, 52 (19). 1611-1613 doi:10.1063/1.99702
Batstone, J. L., Gibson, J. M., Tung, R. T., Levi, A. F. J. (1988) ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Applied Physics Letters, 52 (10). 828-830 doi:10.1063/1.99297
Gibson, J. M., Batstone, J. L., Tung, R. T. (1987) Insitustudy of the molecular beam epitaxy of CoSi2on (111) Si by transmission electron microscopy and diffraction. Applied Physics Letters, 51 (1). 45-47 doi:10.1063/1.98882
Duboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560
Flohr, Th., Schulz, M., Tung, R. T. (1987) Infrared absorption of epitaxial NiSi2layers on Si(111). Applied Physics Letters, 51 (17). 1343-1345 doi:10.1063/1.98673
Lin, T. L., Fathauer, R. W., Grunthaner, P. J., d’Anterroches, C. (1988) Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2on Si (111). Applied Physics Letters, 52 (10). 804-806 doi:10.1063/1.99289
Shigeta, Y. (1988) Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111). Applied Physics Letters, 52 (8). 619-621 doi:10.1063/1.99383
Tung, R. T., Schrey, F. (1989) Growth of epitaxial NiSi2on Si(111) at room temperature. Applied Physics Letters, 55 (3). 256-258 doi:10.1063/1.102385
Phillips, Julia M., Batstone, J. L., Hensel, J. C., Cerullo, M. (1987) Electrical and structural characterization of ultrathin epitaxial CoSi2on Si(111). Applied Physics Letters, 51 (23). 1895-1897 doi:10.1063/1.98504
Ospelt, M., Henz, J., Flepp, L., von Känel, H. (1988) Schottky barriers of epitaxial NiSi2on Si(111). Applied Physics Letters, 52 (3). 227-229 doi:10.1063/1.99527
Tung, R. T. (1989) Si∕CoSi[sub 2]∕Si Structures: Pseudomorphism, Interface Structures, Epitaxial Orientations, and the Control of Pinholes. Journal of the Electrochemical Society, 136. 815pp. doi:10.1149/1.2096749
 
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