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Shigeta, Y. (1988) Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111). Applied Physics Letters, 52 (8). 619-621 doi:10.1063/1.99383

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Reference TypeJournal (article/letter/editorial)
TitleSurface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)
JournalApplied Physics Letters
AuthorsShigeta, Y.Author
Year1988 (February 22)Volume52
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99383Search in ResearchGate
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Mindat Ref. ID8483852Long-form Identifiermindat:1:5:8483852:2
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Full ReferenceShigeta, Y. (1988) Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111). Applied Physics Letters, 52 (8). 619-621 doi:10.1063/1.99383
Plain TextShigeta, Y. (1988) Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111). Applied Physics Letters, 52 (8). 619-621 doi:10.1063/1.99383
In(1988, February) Applied Physics Letters Vol. 52 (8) AIP Publishing

See Also

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Shigeta, Y. (1990) Erratum: Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111) [Appl. Phys. Lett. 52, 619 (1988)]. Applied Physics Letters, 56 (3). 301 doi:10.1063/1.103338
Shigeta, Yukichi, Maki, Kunisuke (1989) Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth. Applied Physics Letters, 55 (20). 2078-2080 doi:10.1063/1.102111
Shigeta, Yukichi, Maki, Kunisuke (1990) Erratum: Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth [Appl. Phys. Lett. 55, 2078 (1989)]. Applied Physics Letters, 56 (3). 301 doi:10.1063/1.103339
Shigeta, Yukichi, Maki, Kunisuke (1994) Annealing effect on an amorphous Si film deposited on a 7×7 superlattice surface of Si(111) studied with low‐energy electron diffraction. Journal of Applied Physics, 75 (10). 5033-5039 doi:10.1063/1.355745
Shigeta, Yukichi, Maki, Kunisuke (1990) Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction. Japanese Journal of Applied Physics, 29. 2092-2097 doi:10.1143/jjap.29.2092
Shigeta, Yukichi (1998) Influence of Surface Structure on Epitaxial Growth of Si on Si(111)-(7 × 7) Substrate. Surface Review and Letters, 5 (3). 865-872 doi:10.1142/s0218625x98001237
Fukaya, Y., Shigeta, Y., Maki, K. (2000) Dynamic change in the surface and layer structures during epitaxial growth of Si on aSi(111)−7×7surface. Physical Review B, 61 (19) 13000-13004 doi:10.1103/physrevb.61.13000
Takano, Y., Kanaya, Y., Kawai, T., Torihata, T., Pak, K., Yonezu, H. (1990) Solid phase epitaxial growth of GaAs on Si (111). Applied Physics Letters, 56 (17). 1664-1666 doi:10.1063/1.103110
Moniwa, Masahiro, Kusukawa, Kikuo, Murakami, Eiichi, Warabisako, Terunori, Miyao, Masanobu (1988) Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy. Applied Physics Letters, 52 (21). 1788-1790 doi:10.1063/1.99626
Ruan, Like, Chen, D. M. (1998) Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111). Applied Physics Letters, 72 (26). 3464-3466 doi:10.1063/1.121667
Tung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
 
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