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Etoh, Hiroyuki, Murakami, Eiichi, Nishida, Akio, Nakagawa, Kiyokazu, Miyao, Masanobu (1991) Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGexHeterostructure. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l163

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGexHeterostructure
JournalJapanese Journal of Applied Physics
AuthorsEtoh, HiroyukiAuthor
Murakami, EiichiAuthor
Nishida, AkioAuthor
Nakagawa, KiyokazuAuthor
Miyao, MasanobuAuthor
Year1991 (February 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l163Search in ResearchGate
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Mindat Ref. ID14996843Long-form Identifiermindat:1:5:14996843:2
GUID0
Full ReferenceEtoh, Hiroyuki, Murakami, Eiichi, Nishida, Akio, Nakagawa, Kiyokazu, Miyao, Masanobu (1991) Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGexHeterostructure. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l163
Plain TextEtoh, Hiroyuki, Murakami, Eiichi, Nishida, Akio, Nakagawa, Kiyokazu, Miyao, Masanobu (1991) Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGexHeterostructure. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l163
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Murakami, Eiichi, Etoh, Hiroyuki, Nakagawa, Kiyokazu, Miyao, Masanobu (1990) High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si0.5Ge0.5/Ge/Si1-XsGeXsHeterostructures Fabricated Using Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1059
Miyao, Masanobu, Murakami, Eiichi, Etoh, Hiroyuki, Nakagawa, Kiyokazu, Nishida, Akio (1991) High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure. Journal of Crystal Growth, 111 (1). 912-915 doi:10.1016/0022-0248(91)91106-k
Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro, Nakamura, Hatsuo, Murakami, Eiichi, Nakagawa, Kiyokazu (1991) Nondestructive Observation of Si0.5Ge0.5/Ge/Si1-xGexHeterostructure Using Soft X-Ray Emission Spectroscopy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1653
Yamaguchi, Shinya, Sugii, Nobuyuki, Nakagawa, Kiyokazu, Miyao, Masanobu (2000) Optical Investigations of Solid-Phase Crystallization of Si1-xGex. Japanese Journal of Applied Physics, 39. 2054-2057 doi:10.1143/jjap.39.2054
Sugii, Nobuyuki, Nakagawa, Kiyokazu, Yamaguchi, Shinya, Miyao, Masanobu (1999) Atomic-Layer Doping in Si1-xGex/Si/Si1-xGexHeterostructures by Two-Step Solid-Phase Epitaxy. Japanese Journal of Applied Physics, 38. 2424-2426 doi:10.1143/jjap.38.2424
Sugii, Nobuyuki, Nakagawa, Kiyokazu, Kimura, Yoshinobu, Yamaguchi, Shinya, Miyao, Masanobu (1998) Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGexHeterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy. Japanese Journal of Applied Physics, 37. 1308-1310 doi:10.1143/jjap.37.1308
Nakagawa, Kiyokazu, Nishida, Akio, Kimura, Yoshinobu, Shimada, Toshikazu (1994) Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 33. doi:10.1143/jjap.33.l1331
Nakagawa, Kiyokazu, Miyao, Masanobu, Shiraki, Yasuhiro (1988) MBE-Related Surface Segregation of Dopant Atoms in Silicon. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2013
Nakagawa, Kiyokazu, Miyao, Masanobu (1991) Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy. Journal of Applied Physics, 69 (5). 3058-3062 doi:10.1063/1.348566
Miyao, Masanobu, Nakagawa, Kiyokazu, Ichikawa, Masakazu, Hiruma, Kenji, Nakazato, Kazuo (1994) Nanostructure Fabrication Based on Spontaneous Formation Mechanisms. Japanese Journal of Applied Physics, 33. 7214-7222 doi:10.1143/jjap.33.7214
Miyao, Masanobu, Nakagawa, Kiyokazu (1994) Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices*. Japanese Journal of Applied Physics, 33. 3791-3802 doi:10.1143/jjap.33.3791
 
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