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Nakamura, Shuji (1991) GaN Growth Using GaN Buffer Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1705

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Reference TypeJournal (article/letter/editorial)
TitleGaN Growth Using GaN Buffer Layer
JournalJapanese Journal of Applied Physics
AuthorsNakamura, ShujiAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1705Search in ResearchGate
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Mindat Ref. ID14996869Long-form Identifiermindat:1:5:14996869:2
GUID0
Full ReferenceNakamura, Shuji (1991) GaN Growth Using GaN Buffer Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1705
Plain TextNakamura, Shuji (1991) GaN Growth Using GaN Buffer Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1705
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

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Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1991) Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1708
Nakamura, Shuji (1991) In SituMonitoring of GaN Growth Using Interference Effects. Japanese Journal of Applied Physics, 30. 1620-1627 doi:10.1143/jjap.30.1620
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1991) High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1998
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1992) Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers. Japanese Journal of Applied Physics, 31. 2883-2888 doi:10.1143/jjap.31.2883
Nakamura, Shuji (1991) Analysis of Real-Time Monitoring Using Interference Effects. Japanese Journal of Applied Physics, 30. 1348-1353 doi:10.1143/jjap.30.1348
Hashimoto, Tadao, Wu, Feng, Speck, James S., Nakamura, Shuji (2007) Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l525
Harada, Keizo, Nakanishi, Hidenori, Itozaki, Hideo, Yazu, Shuji (1991) Growth of Buffer Layers on Si Substrate for High-TcSuperconducting Thin Films. Japanese Journal of Applied Physics, 30. 934-938 doi:10.1143/jjap.30.934
Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1993) P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l8
Nakamura, Shuji, Mukai, Takashi (1992) High-Quality InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1457
Hashimoto, Tadao, Wu, Feng, Speck, James S., Nakamura, Shuji (2007) Growth of Bulk GaN Crystals by the Basic Ammonothermal Method. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l889
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1993) Si-Doped InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l16
 
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