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Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1991) High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1998

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Reference TypeJournal (article/letter/editorial)
TitleHigh-Power GaN P-N Junction Blue-Light-Emitting Diodes
JournalJapanese Journal of Applied Physics
AuthorsNakamura, ShujiAuthor
Mukai, TakashiAuthor
Senoh, MasayukiAuthor
Year1991 (December 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1998Search in ResearchGate
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Mindat Ref. ID14996969Long-form Identifiermindat:1:5:14996969:9
GUID0
Full ReferenceNakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1991) High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1998
Plain TextNakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1991) High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1998
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1993) P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l8
Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1991) Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1708
Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1993) High‐power InGaN/GaN double‐heterostructure violet light emitting diodes. Applied Physics Letters, 62 (19). 2390-2392 doi:10.1063/1.109374
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1994) High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes. Journal of Applied Physics, 76 (12). 8189-8191 doi:10.1063/1.357872
Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi, Yamada, Takao, Mukai, Takashi (1995) Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1332
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1994) Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes. Applied Physics Letters, 64 (13). 1687-1689 doi:10.1063/1.111832
Mukai, Takashi, Takekawa, Kazunori, Nakamura, Shuji (1998) InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l839
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1993) Si-Doped InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l16
Nakamura, Shuji, Iwasa, Naruhito, Senoh, Masayuki, Mukai, Takashi (1992) Hole Compensation Mechanism of P-Type GaN Films. Japanese Journal of Applied Physics, 31. 1258-1266 doi:10.1143/jjap.31.1258
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Iwasa, Naruhito (1992) Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l139
Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi (1995) High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l797
 
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