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Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Iwasa, Naruhito (1992) Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l139

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Reference TypeJournal (article/letter/editorial)
TitleThermal Annealing Effects on P-Type Mg-Doped GaN Films
JournalJapanese Journal of Applied Physics
AuthorsNakamura, ShujiAuthor
Mukai, TakashiAuthor
Senoh, MasayukiAuthor
Iwasa, NaruhitoAuthor
Year1992 (February 15)Volume31
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.31.l139Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14998429Long-form Identifiermindat:1:5:14998429:6
GUID0
Full ReferenceNakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Iwasa, Naruhito (1992) Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l139
Plain TextNakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Iwasa, Naruhito (1992) Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l139
In(1992) Japanese Journal of Applied Physics Vol. 31. Japan Society of Applied Physics

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Nakamura, Shuji, Iwasa, Naruhito, Senoh, Masayuki, Mukai, Takashi (1992) Hole Compensation Mechanism of P-Type GaN Films. Japanese Journal of Applied Physics, 31. 1258-1266 doi:10.1143/jjap.31.1258
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1992) Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers. Japanese Journal of Applied Physics, 31. 2883-2888 doi:10.1143/jjap.31.2883
Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1991) Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1708
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1993) Si-Doped InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l16
Nakamura, Shuji, Mukai, Takashi (1992) High-Quality InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1457
Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi, Yamada, Takao, Mukai, Takashi (1995) Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1332
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki, Nagahama, Shin‐ichi, Iwasa, Naruhito (1993) InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films. Journal of Applied Physics, 74 (6). 3911-3915 doi:10.1063/1.354486
Nakamura, Shuji, Senoh, Masayuki, Mukai, Takashi (1993) P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l8
Nakamura, Shuji, Mukai, Takashi, Senoh, Masayuki (1991) High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1998
Nakamura, Shuji, Iwasa, Naruhito, Nagahama, Shin-ichi (1993) Cd-Doped InGaN Films Grown on GaN Films. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l338
Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, Nagahama, Shin-ichi (1995) High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l797
 
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