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Park, Seoung-Hwan (2000) Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization. Japanese Journal of Applied Physics, 39. 3478-3482 doi:10.1143/jjap.39.3478

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Reference TypeJournal (article/letter/editorial)
TitleCrystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
JournalJapanese Journal of Applied Physics
AuthorsPark, Seoung-HwanAuthor
Year2000 (June 15)Volume39
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.39.3478Search in ResearchGate
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Mindat Ref. ID15014037Long-form Identifiermindat:1:5:15014037:7
GUID0
Full ReferencePark, Seoung-Hwan (2000) Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization. Japanese Journal of Applied Physics, 39. 3478-3482 doi:10.1143/jjap.39.3478
Plain TextPark, Seoung-Hwan (2000) Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization. Japanese Journal of Applied Physics, 39. 3478-3482 doi:10.1143/jjap.39.3478
In(2000) Japanese Journal of Applied Physics Vol. 39. Japan Society of Applied Physics

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Park, Seoung-Hwan (2003) Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation. Japanese Journal of Applied Physics, 42. 5052-5055 doi:10.1143/jjap.42.5052
Park, Seoung-Hwan, Ahn, Doyeol, Lee, Yong-Tak (2001) Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l941
Park, Seoung-Hwan (2001) Intraband Relaxation Time in Wurtzite GaN/AlGaN Quantum-Well Structures with Spontaneous Polarization Effects. Japanese Journal of Applied Physics, 40. 4570-4574 doi:10.1143/jjap.40.4570
Park, Seoung-Hwan (2002) Structural Dependence of Electronic Properties in (10\bar10) Wurtzite GaN/AlGaN Quantum Wells. Japanese Journal of Applied Physics, 41. 2084-2089 doi:10.1143/jjap.41.2084
Park, Seoung-Hwan, Chuang, Shun-Lien (2000) Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment. Applied Physics Letters, 76 (15). 1981-1983 doi:10.1063/1.126229
Park, Seoung-Hwan (2002) Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells. Journal of Applied Physics, 91 (12). 9904pp. doi:10.1063/1.1480465
Park, Seoung-Hwan (2003) Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l170
Park, Seoung-Hwan, Chuang, Shun-Lien (2000) Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects. Journal of Applied Physics, 87 (1). 353-364 doi:10.1063/1.371915
Park, Seoung-Hwan, Chuang, Shun-Lien (1998) Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers. Applied Physics Letters, 72 (24). 3103-3105 doi:10.1063/1.121560
Takeuchi, Tetsuya, Amano, Hiroshi, Akasaki, Isamu (2000) Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells. Japanese Journal of Applied Physics, 39. 413-416 doi:10.1143/jjap.39.413
Park, Seoung-Hwan, Ahn, Doyeol (1999) Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l815
 
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