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Park, Seoung-Hwan (2002) Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells. Journal of Applied Physics, 91 (12). 9904pp. doi:10.1063/1.1480465

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Reference TypeJournal (article/letter/editorial)
TitleCrystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells
JournalJournal of Applied Physics
AuthorsPark, Seoung-HwanAuthor
Year2002Volume91
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1480465Search in ResearchGate
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Mindat Ref. ID5113145Long-form Identifiermindat:1:5:5113145:8
GUID0
Full ReferencePark, Seoung-Hwan (2002) Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells. Journal of Applied Physics, 91 (12). 9904pp. doi:10.1063/1.1480465
Plain TextPark, Seoung-Hwan (2002) Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells. Journal of Applied Physics, 91 (12). 9904pp. doi:10.1063/1.1480465
In(2002) Journal of Applied Physics Vol. 91 (12) AIP Publishing

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Park, Seoung-Hwan (2000) Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization. Japanese Journal of Applied Physics, 39. 3478-3482 doi:10.1143/jjap.39.3478
Park, Seoung-Hwan (2003) Effect of (101Ģ„0) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well. Journal of Applied Physics, 93 (12). 9665-9668 doi:10.1063/1.1577402
Park, Seoung-Hwan (2002) Intraband relaxation time in wurtzite InGaN/GaN quantum-well structures with (101Ģ„0) crystal orientation. Applied Physics Letters, 80 (16). 2830-2832 doi:10.1063/1.1471568
Park, Seoung-Hwan (2003) Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l170
Park, Seoung-Hwan (2002) Erratum: ā€œIntraband relaxation time in wurtzite InGaN/GaN quantum-well structures with (101Ģ„0) crystal orientationā€ [Appl. Phys. Lett. 80, 2830 (2002)]. Applied Physics Letters, 81 (6). 1149 doi:10.1063/1.1499231
Park, Seoung-Hwan (2002) Structural Dependence of Electronic Properties in (10\bar10) Wurtzite GaN/AlGaN Quantum Wells. Japanese Journal of Applied Physics, 41. 2084-2089 doi:10.1143/jjap.41.2084
Park, Seoung-Hwan (2003) Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation. Japanese Journal of Applied Physics, 42. 5052-5055 doi:10.1143/jjap.42.5052
Park, Seoung-Hwan, Chuang, Shun-Lien (2000) Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment. Applied Physics Letters, 76 (15). 1981-1983 doi:10.1063/1.126229
Park, Seoung-Hwan, Chuang, Shun-Lien (1998) Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers. Applied Physics Letters, 72 (24). 3103-3105 doi:10.1063/1.121560
Park, Seoung-Hwan, Ahn, Doyeol, Oh, Jae-Eung (2008) Optical anisotropy in ultraviolet InGaNāˆ•GaN quantum-well light-emitting diodes with a general crystal orientation. Applied Physics Letters, 92 (1). 11130pp. doi:10.1063/1.2827581
Park, Seoung-Hwan, Ahn, Doyeol (2007) Depolarization effects in (112ĀÆ2)-oriented InGaNāˆ•GaN quantum well structures. Applied Physics Letters, 90 (1). 13505pp. doi:10.1063/1.2420795
 
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