Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Chen, W. C., Su, Y. K., Chuang, R. W., Hsu, S. H. (2006) Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 45 (4) 3537-3539 doi:10.1143/jjap.45.3537

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTriple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsChen, W. C.Author
Su, Y. K.Author
Chuang, R. W.Author
Hsu, S. H.Author
Year2006 (April 25)Volume45
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.3537Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15027982Long-form Identifiermindat:1:5:15027982:4
GUID0
Full ReferenceChen, W. C., Su, Y. K., Chuang, R. W., Hsu, S. H. (2006) Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 45 (4) 3537-3539 doi:10.1143/jjap.45.3537
Plain TextChen, W. C., Su, Y. K., Chuang, R. W., Hsu, S. H. (2006) Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 45 (4) 3537-3539 doi:10.1143/jjap.45.3537
In(2006, April) Japanese Journal of Applied Physics Vol. 45 (4) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Su, Y. K., Chen, W. C., Hsu, S. H., Wu, J. D., Chang, S. J., Chuang, R. W., Chen, W. R. (2006) Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors. Japanese Journal of Applied Physics, 45 (4) 3372-3375 doi:10.1143/jjap.45.3372
Hsu, S. H., Su, Y. K., Chuang, R. W., Chang, S. J., Chen, W. C., Chen, W. R. (2005) Study of Electronic Properties by Persistent Photoconductivity Measurement in GaxIn1-xNyAs1-yGrown by MOCVD. Japanese Journal of Applied Physics, 44 (4) 2454-2457 doi:10.1143/jjap.44.2454
Hsu, C. C., Wong, T. K. S., Wilson, I. H. (1993) Surface morphology of metalorganic vapor phase epitaxy grown GaAs observed by atomic force microscopy. Applied Physics Letters, 63 (13). 1839-1841 doi:10.1063/1.110679
Nishida, Toshio, Kobayashi, Naoki (1996) Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l930
Lee, S. W., Chu, K. U., Kim, S. W., Park, S., Kwon, O’D., Goossen, K. W., Pei, S. S. (1994) InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 64 (23). 3065-3067 doi:10.1063/1.111348
Huang, H. Y., Shu, C. K., Lin, W. C., Chuang, C. H., Lee, M. C., Chen, W. K., Lee, Y. Y. (2000) Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy. Applied Physics Letters, 76 (22). 3224-3226 doi:10.1063/1.126588
Wu, M. C., Su, Y. K., Cheng, K. Y., Chang, C. Y. (1986) High Purity In0.5Ga0.5P Grown on GaAs by Liquid Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l90
Hsu, Chin-Tsar (1996) Atomic Layer Epitaxy Growth of ZnSe on (100) GaAs Using Metalorganic Vapor-Phase Epitaxy System. Japanese Journal of Applied Physics, 35. 4476-4479 doi:10.1143/jjap.35.4476
Shibata, Noriyoshi, Ohki, Akira, Zembutsu, Sakae, Katsui, Akinori (1988) Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l487
Nishida, Toshio, Kobayashi, Naoki (1997) Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 36. 1690-1693 doi:10.1143/jjap.36.1690
Kobayashi, Yasufumi, Egawa, Takashi, Jimbo, Takashi, Umeno, Masayoshi (1991) Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1781
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 20, 2025 22:39:48
Go to top of page