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Okamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu (2011) Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd13

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Reference TypeJournal (article/letter/editorial)
TitleImproved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process
JournalJapanese Journal of Applied Physics
AuthorsOkamoto, KoichiroAuthor
Tada, MunehiroAuthor
Ito, KimihikoAuthor
Hada, HiromitsuAuthor
Year2011 (April 20)Volume50
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.50.04dd13Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15037708Long-form Identifiermindat:1:5:15037708:7
GUID0
Full ReferenceOkamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu (2011) Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd13
Plain TextOkamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu (2011) Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd13
In(2011, April) Japanese Journal of Applied Physics Vol. 50 (4) Japan Society of Applied Physics

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Okamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu (2011) Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dd13
Banno, Naoki, Sakamoto, Toshitsugu, Tada, Munehiro, Miyamura, Makoto, Okamoto, Koichiro, Hada, Hiromitsu, Aono, Masakazu (2011) ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device. Japanese Journal of Applied Physics, 50 (7) 74201 doi:10.1143/jjap.50.074201
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd15
Okamoto, Koichiro, Tada, Munehiro, Banno, Naoki, Iguchi, Noriyuki, Sakamoto, Toshitsugu, Hada, Hiromitsu (2015) Logic compatible process technology for embedded atom switches in CMOS. Japanese Journal of Applied Physics, 54 (5) 5 doi:10.7567/jjap.54.05ed05
Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Nohisa, Tatsuhiko, Hada, Hiromitsu (2015) Mechanism of OFF-state lifetime improvement in complementary atom switch. Japanese Journal of Applied Physics, 54 (4) 4 doi:10.7567/jjap.54.04dd08
Banno, Naoki, Sakamoto, Toshitsugu, Tada, Munehiro, Miyamura, Makoto, Okamoto, Koichiro, Hada, Hiromitsu, Aono, Masakazu (2011) ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device. Japanese Journal of Applied Physics, 50 (7) 74201 doi:10.7567/jjap.50.074201
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook (2011) Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dd15
Bai, Xu, Tsuji, Yukihide, Sakamoto, Toshitsugu, Morioka, Ayuka, Miyamura, Makoto, Tada, Munehiro, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu (2016) Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04ef01
Bai, Xu, Sakamoto, Toshitsugu, Tsuji, Yukihide, Miyamura, Makoto, Morioka, Ayuka, Nebashi, Ryusuke, Tada, Munehiro, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu, Sugibayashi, Tadahiko (2017) Architecture optimization of nanobridge-based field-programmable gate array and its evaluation. Japanese Journal of Applied Physics, 56 (4) 4 doi:10.7567/jjap.56.04cf03
Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Nohisa, Tatsuhiko, Hada, Hiromitsu (2015) Publisher’s Note: “Mechanism of OFF-state lifetime improvement in complementary atom switch”. Japanese Journal of Applied Physics, 54 (5) 59201 doi:10.7567/jjap.54.059201
Nishi, Yusuke, Iwata, Tatsuya, Kimoto, Tsunenobu (2011) Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory. Japanese Journal of Applied Physics, 50. 15802 doi:10.1143/jjap.50.015802
 
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