Mariappan, Murugesan, Fukushima, Takafumi, Bea, Ji-Chel, Hashimoto, Hiroyuki, Koyanagi, Mitsumasa (2016) Capacitance characteristics of low-klow-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04ec12
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Capacitance characteristics of low-klow-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Mariappan, Murugesan | Author | |
| Fukushima, Takafumi | Author | ||
| Bea, Ji-Chel | Author | ||
| Hashimoto, Hiroyuki | Author | ||
| Koyanagi, Mitsumasa | Author | ||
| Year | 2016 (April 1) | Volume | 55 |
| Issue | 4 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.7567/jjap.55.04ec12Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 15046119 | Long-form Identifier | mindat:1:5:15046119:9 |
| GUID | 0 | ||
| Full Reference | Mariappan, Murugesan, Fukushima, Takafumi, Bea, Ji-Chel, Hashimoto, Hiroyuki, Koyanagi, Mitsumasa (2016) Capacitance characteristics of low-klow-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04ec12 | ||
| Plain Text | Mariappan, Murugesan, Fukushima, Takafumi, Bea, Ji-Chel, Hashimoto, Hiroyuki, Koyanagi, Mitsumasa (2016) Capacitance characteristics of low-klow-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04ec12 | ||
| In | (2016, April) Japanese Journal of Applied Physics Vol. 55 (4) Japan Society of Applied Physics | ||
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