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Avrov, D. D., Lebedev, A. O., Tairov, Yu. M. (2018) Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere. Inorganic Materials, 54 (11) 1103-1108 doi:10.1134/s002016851811002x

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere
JournalInorganic Materials
AuthorsAvrov, D. D.Author
Lebedev, A. O.Author
Tairov, Yu. M.Author
Year2018 (November)Volume54
Issue11
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s002016851811002xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID15065102Long-form Identifiermindat:1:5:15065102:6
GUID0
Full ReferenceAvrov, D. D., Lebedev, A. O., Tairov, Yu. M. (2018) Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere. Inorganic Materials, 54 (11) 1103-1108 doi:10.1134/s002016851811002x
Plain TextAvrov, D. D., Lebedev, A. O., Tairov, Yu. M. (2018) Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere. Inorganic Materials, 54 (11) 1103-1108 doi:10.1134/s002016851811002x
In(2018, November) Inorganic Materials Vol. 54 (11) Pleiades Publishing Ltd

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Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M. (2005) Defect formation in silicon carbide large-scale ingots grown by sublimation technique. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.112
Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu. (2011) Defect structure of 4H silicon carbide ingots. Journal of Crystal Growth, 318 (1). 394-396 doi:10.1016/j.jcrysgro.2010.10.166
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Avrov, D.D., Dorozhkin, Sergey I., Lebedev, Andrew O., Rastegaev, V.P., Tairov, Yuri M. (2000) Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process. Materials Science Forum, 338. 1515-1518 doi:10.4028/www.scientific.net/msf.338-342.1515
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