Reference Type | Journal (article/letter/editorial) |
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Title | Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties |
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Journal | Physical Chemistry Chemical Physics |
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Authors | Nguyen, Duy Khanh | Author |
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Guerrero-Sanchez, J. | Author |
Hoat, D. M. | Author |
Year | 2022 | Volume | 24 |
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Issue | 44 |
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Publisher | Royal Society of Chemistry (RSC) |
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DOI | doi:10.1039/d2cp04613jSearch in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 15520050 | Long-form Identifier | mindat:1:5:15520050:2 |
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GUID | 0 |
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Full Reference | Nguyen, Duy Khanh, Guerrero-Sanchez, J., Hoat, D. M. (2022) Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties. Physical Chemistry Chemical Physics, 24 (44) 27505-27514 doi:10.1039/d2cp04613j |
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Plain Text | Nguyen, Duy Khanh, Guerrero-Sanchez, J., Hoat, D. M. (2022) Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties. Physical Chemistry Chemical Physics, 24 (44) 27505-27514 doi:10.1039/d2cp04613j |
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In | (2022) Physical Chemistry Chemical Physics Vol. 24 (44) Royal Society of Chemistry (RSC) |
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