Ha, Chu Viet, Nguyen, Duy Khanh, Anh, Dang Tuan, Guerrero-Sanchez, J., Hoat, D. M. (2023) Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms. New Journal of Chemistry, 47 (6) 2787-2796 doi:10.1039/d2nj05634h
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms | ||
Journal | New Journal of Chemistry | ||
Authors | Ha, Chu Viet | Author | |
Nguyen, Duy Khanh | Author | ||
Anh, Dang Tuan | Author | ||
Guerrero-Sanchez, J. | Author | ||
Hoat, D. M. | Author | ||
Year | 2023 | Volume | 47 |
Issue | 6 | ||
Publisher | Royal Society of Chemistry (RSC) | ||
DOI | doi:10.1039/d2nj05634hSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 15692527 | Long-form Identifier | mindat:1:5:15692527:5 |
GUID | 0 | ||
Full Reference | Ha, Chu Viet, Nguyen, Duy Khanh, Anh, Dang Tuan, Guerrero-Sanchez, J., Hoat, D. M. (2023) Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms. New Journal of Chemistry, 47 (6) 2787-2796 doi:10.1039/d2nj05634h | ||
Plain Text | Ha, Chu Viet, Nguyen, Duy Khanh, Anh, Dang Tuan, Guerrero-Sanchez, J., Hoat, D. M. (2023) Novel electronic and magnetic features in XC (X = Si and Ge) monolayers induced by doping with group-VA atoms. New Journal of Chemistry, 47 (6) 2787-2796 doi:10.1039/d2nj05634h | ||
In | (2023) New Journal of Chemistry Vol. 47 (6) Royal Society of Chemistry (RSC) |
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