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Mc Kearney, Patrick, Schäfer, Sören, Paulus, Simon, Roser, Michael, Piermaier, Fabian, Lebershausen, Ingo, Kontermann, Stefan Ralf (2023) Ultrafast laser heating for controlling the optoelectronic properties of sulfur hyperdoped black silicon. Journal of Applied Physics, 133 (1) 13102 doi:10.1063/5.0130743

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Reference TypeJournal (article/letter/editorial)
TitleUltrafast laser heating for controlling the optoelectronic properties of sulfur hyperdoped black silicon
JournalJournal of Applied Physics
AuthorsMc Kearney, PatrickAuthor
Schäfer, SörenAuthor
Paulus, SimonAuthor
Roser, MichaelAuthor
Piermaier, FabianAuthor
Lebershausen, IngoAuthor
Kontermann, Stefan RalfAuthor
Year2023 (January 7)Volume133
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/5.0130743Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15662949Long-form Identifiermindat:1:5:15662949:4
GUID0
Full ReferenceMc Kearney, Patrick, Schäfer, Sören, Paulus, Simon, Roser, Michael, Piermaier, Fabian, Lebershausen, Ingo, Kontermann, Stefan Ralf (2023) Ultrafast laser heating for controlling the optoelectronic properties of sulfur hyperdoped black silicon. Journal of Applied Physics, 133 (1) 13102 doi:10.1063/5.0130743
Plain TextMc Kearney, Patrick, Schäfer, Sören, Paulus, Simon, Roser, Michael, Piermaier, Fabian, Lebershausen, Ingo, Kontermann, Stefan Ralf (2023) Ultrafast laser heating for controlling the optoelectronic properties of sulfur hyperdoped black silicon. Journal of Applied Physics, 133 (1) 13102 doi:10.1063/5.0130743
In(2023, January) Journal of Applied Physics Vol. 133 (1) AIP Publishing

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Schäfer, Sören, McKearney, Patrick, Paulus, Simon, Kontermann, Stefan (2022) Analytical model for extracting optical properties from absorptance of femtosecond-laser structured hyperdoped silicon. Journal of Applied Physics, 131 (24) 243102 doi:10.1063/5.0094177
Saring, Philipp, Lena Baumann, Anna, Schlieper-Ludewig, Bettina, Kontermann, Stefan, Schade, Wolfgang, Seibt, Michael (2013) Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions. Applied Physics Letters, 103 (6). 61904pp. doi:10.1063/1.4817726
Liu, Xiaolong, McKearney, Patrick, Schäfer, Sören, Radfar, Behrad, Berencén, Yonder, Kentsch, Ulrich, Vähänissi, Ville, Zhou, Shengqiang, Kontermann, Stefan, Savin, Hele (2024) Impact of post-ion implantation annealing on Se-hyperdoped Ge. Applied Physics Letters, 125 (4) doi:10.1063/5.0213637
Gimpel, Thomas, Höger, Ingmar, Falk, Fritz, Schade, Wolfgang, Kontermann, Stefan (2012) Electron backscatter diffraction on femtosecond laser sulfur hyperdoped silicon. Applied Physics Letters, 101 (11). 111911pp. doi:10.1063/1.4752454
Guenther, Kay-Michael, Gimpel, Thomas, Kontermann, Stefan, Schade, Wolfgang (2013) Investigation of the sulfur doping profile in femtosecond-laser processed silicon. Applied Physics Letters, 102 (20). 202104pp. doi:10.1063/1.4807679
Gimpel, Thomas, Guenther, Kay-Michael, Kontermann, Stefan, Schade, Wolfgang (2014) Current-voltage characteristic and sheet resistances after annealing of femtosecond laser processed sulfur emitters for silicon solar cells. Applied Physics Letters, 105 (5). 53504pp. doi:10.1063/1.4892474
Guenther, Kay-Michael, Gimpel, Thomas, Tomm, Jens W., Winter, Stefan, Ruibys, Augustinas, Kontermann, Stefan, Schade, Wolfgang (2014) Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination. Applied Physics Letters, 104 (4). 42107pp. doi:10.1063/1.4863439
Kontermann, Stefan, Preu, Ralf, Willeke, Gerhard (2011) Calculating the specific contact resistance from the nanostructure at the interface of silver thick film contacts on n-type silicon. Applied Physics Letters, 99 (11). 111905pp. doi:10.1063/1.3635383
Sickel, J., Ahrens, A., Baumann, A. L., Schade, W., Kontermann, S., Seibt, M. (2017) Microscopic electronic and structural analysis of femtosecond laser sulfur hyperdoped silicon. physica status solidi (a), 214 (7). 1700264pp. doi:10.1002/pssa.201700264
Recht, Daniel, Sullivan, Joseph T., Reedy, Robert, Buonassisi, Tonio, Aziz, Michael J. (2012) Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting. Applied Physics Letters, 100 (11). 112112pp. doi:10.1063/1.3695171
(2017) Thermal annealing performance of sulfur-hyperdoped black silicon fabricated using a Nd:YAG nanosecond-pulsed laser. Materials Research Bulletin, 93. 238-244 doi:10.1016/j.materresbull.2017.05.011
 
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