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Liu, Xiaolong, McKearney, Patrick, Schäfer, Sören, Radfar, Behrad, Berencén, Yonder, Kentsch, Ulrich, Vähänissi, Ville, Zhou, Shengqiang, Kontermann, Stefan, Savin, Hele (2024) Impact of post-ion implantation annealing on Se-hyperdoped Ge. Applied Physics Letters, 125 (4) doi:10.1063/5.0213637

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Reference TypeJournal (article/letter/editorial)
TitleImpact of post-ion implantation annealing on Se-hyperdoped Ge
JournalApplied Physics Letters
AuthorsLiu, XiaolongAuthor
McKearney, PatrickAuthor
Schäfer, SörenAuthor
Radfar, BehradAuthor
Berencén, YonderAuthor
Kentsch, UlrichAuthor
Vähänissi, VilleAuthor
Zhou, ShengqiangAuthor
Kontermann, StefanAuthor
Savin, HeleAuthor
Year2024 (July 22)Volume125
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/5.0213637Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID17508217Long-form Identifiermindat:1:5:17508217:1
GUID0
Full ReferenceLiu, Xiaolong, McKearney, Patrick, Schäfer, Sören, Radfar, Behrad, Berencén, Yonder, Kentsch, Ulrich, Vähänissi, Ville, Zhou, Shengqiang, Kontermann, Stefan, Savin, Hele (2024) Impact of post-ion implantation annealing on Se-hyperdoped Ge. Applied Physics Letters, 125 (4) doi:10.1063/5.0213637
Plain TextLiu, Xiaolong, McKearney, Patrick, Schäfer, Sören, Radfar, Behrad, Berencén, Yonder, Kentsch, Ulrich, Vähänissi, Ville, Zhou, Shengqiang, Kontermann, Stefan, Savin, Hele (2024) Impact of post-ion implantation annealing on Se-hyperdoped Ge. Applied Physics Letters, 125 (4) doi:10.1063/5.0213637
In(2024, July) Applied Physics Letters Vol. 125 (4) AIP Publishing

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