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Pavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636

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Reference TypeJournal (article/letter/editorial)
TitleEtching kinetics of the low temperature chemically vapour deposited SiO2 films
JournalJournal of Materials Science Letters
AuthorsPavelescu, C.Author
Cobianu, C.Author
Segal, E.Author
Year1984 (July)Volume3
Issue7
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00719636Search in ResearchGate
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Mindat Ref. ID16408963Long-form Identifiermindat:1:5:16408963:1
GUID0
Full ReferencePavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636
Plain TextPavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636
In(1984, July) Journal of Materials Science Letters Vol. 3 (7) Springer Science and Business Media LLC

See Also

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Pavelescu, C., Cobianu, C., Segal, E. (1985) Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditions. Journal of Materials Science Letters, 4 (10) 1280-1281 doi:10.1007/bf00723481
Pavelescu, C., Cobianu, C. (1990) Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio. Journal of Materials Science Letters, 9 (2) 143-144 doi:10.1007/bf00727697
Bantoiu, R., Pavelescu, C., Avramescu, V. (1991) Dry etching of low-temperature chemically vapour deposited phosphosilicate glass films in CF4-Q2 plasma. Journal of Materials Science Letters, 10 (12) 703-705 doi:10.1007/bf00722774
Pavelescu, C., Cobianu, C. (1988) A mechanism for the surface reaction between silane and oxygen at low temperature and correlations with the properties of the deposited SiO2 films. Journal of Materials Science Letters, 7 (10) 1107-1109 doi:10.1007/bf00720846
Vlahovici, N., Pavelescu, C., Kleps, I. (1991) The infrared absorption of antimony-doped SiO2 films chemically vapour deposited in the TEOS-SbCl5-O2 system at low temperature. Journal of Materials Science Letters, 10 (15) 920-921 doi:10.1007/bf00724782
Cobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334
Pavelescu, C., Serghi, D. (1992) 1 MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature. Journal of Materials Science, 27. 2631-2635 doi:10.1007/bf00540681
Cobianu, C., Pavelescu, C., Catuneanu, V. M. (1987) Dielectric constant and dissipation factor in LTCVD SiO2 films. Journal of Materials Science Letters, 6 (1) 23-24 doi:10.1007/bf01729416
Cobianu, C., Pavelescu, C., Paunescu, A. (1985) The effect of deposition conditions on the refractive index of LTCVD SiO2 films. Journal of Materials Science Letters, 4 (11) 1419-1420 doi:10.1007/bf00720117
Pavelescu, C., Badila, M., Cobianu, C. (1988) An analysis of the initial oxidation regions of silicon in dry oxygen at atmospheric pressure. Journal of Materials Science Letters, 7 (10) 1110-1111 doi:10.1007/bf00720847
Goto, Takashi, Hirai, Toshio (1983) Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solution. Journal of Materials Science, 18. 3387-3392 doi:10.1007/bf00544164
 
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