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Cobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334

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Reference TypeJournal (article/letter/editorial)
TitleAn etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions
JournalJournal of Materials Science Letters
AuthorsCobianu, C.Author
Pavelescu, C.Author
Year1984 (November)Volume3
Issue11
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00720334Search in ResearchGate
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Mindat Ref. ID16408768Long-form Identifiermindat:1:5:16408768:2
GUID0
Full ReferenceCobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334
Plain TextCobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334
In(1984, November) Journal of Materials Science Letters Vol. 3 (11) Springer Science and Business Media LLC

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Cobianu, C., Pavelescu, C., Paunescu, A. (1985) The effect of deposition conditions on the refractive index of LTCVD SiO2 films. Journal of Materials Science Letters, 4 (11) 1419-1420 doi:10.1007/bf00720117
Pavelescu, C., Cobianu, C., Segal, E. (1985) Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditions. Journal of Materials Science Letters, 4 (10) 1280-1281 doi:10.1007/bf00723481
Orfescu, C., Pavelescu, C., Badila, M. (1990) An etch rate study on thermally annealed SiO2 films deposited in a TEOS-LPCVD system. Journal of Materials Science, 25. 1366-1368 doi:10.1007/bf00585451
Cobianu, C., Pavelescu, C., Catuneanu, V. M. (1987) Dielectric constant and dissipation factor in LTCVD SiO2 films. Journal of Materials Science Letters, 6 (1) 23-24 doi:10.1007/bf01729416
Pavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636
Pavelescu, C., Cobianu, C. (1990) Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio. Journal of Materials Science Letters, 9 (2) 143-144 doi:10.1007/bf00727697
Pavelescu, C., Badila, M., Cobianu, C. (1988) An analysis of the initial oxidation regions of silicon in dry oxygen at atmospheric pressure. Journal of Materials Science Letters, 7 (10) 1110-1111 doi:10.1007/bf00720847
Pavelescu, C., Cobianu, C. (1988) A mechanism for the surface reaction between silane and oxygen at low temperature and correlations with the properties of the deposited SiO2 films. Journal of Materials Science Letters, 7 (10) 1107-1109 doi:10.1007/bf00720846
Bantoiu, R., Pavelescu, C. (1990) Thermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system. Journal of Materials Science Letters, 9 (12) 1435-1437 doi:10.1007/bf00721607
Pavelescu, C. (1983) An Infrared Absorption Study of LTCVD Silicon Dioxide. Journal of the Electrochemical Society, 130. 975pp. doi:10.1149/1.2119872
Gaiseanu, F., Cobianu, C., Dascalu, D. (1993) Dependence of the chemical etch rate and etch time of silicon on the post-implanted diffusion depth: application for membrane achievement. Journal of Materials Science Letters, 12 (20) 1652-1653 doi:10.1007/bf00627041
 
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