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Bantoiu, R., Pavelescu, C. (1990) Thermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system. Journal of Materials Science Letters, 9 (12) 1435-1437 doi:10.1007/bf00721607

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Reference TypeJournal (article/letter/editorial)
TitleThermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system
JournalJournal of Materials Science Letters
AuthorsBantoiu, R.Author
Pavelescu, C.Author
Year1990 (December)Volume9
Issue12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00721607Search in ResearchGate
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Mindat Ref. ID16411704Long-form Identifiermindat:1:5:16411704:4
GUID0
Full ReferenceBantoiu, R., Pavelescu, C. (1990) Thermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system. Journal of Materials Science Letters, 9 (12) 1435-1437 doi:10.1007/bf00721607
Plain TextBantoiu, R., Pavelescu, C. (1990) Thermally annealed phosphosilicate glass films deposited in the SiH4-PH3-O2-N2 system. Journal of Materials Science Letters, 9 (12) 1435-1437 doi:10.1007/bf00721607
In(1990, December) Journal of Materials Science Letters Vol. 9 (12) Springer Science and Business Media LLC

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Pavelescu, C., Serghi, D. (1992) 1 MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature. Journal of Materials Science, 27. 2631-2635 doi:10.1007/bf00540681
Bantoiu, R., Pavelescu, C., Avramescu, V. (1991) Dry etching of low-temperature chemically vapour deposited phosphosilicate glass films in CF4-Q2 plasma. Journal of Materials Science Letters, 10 (12) 703-705 doi:10.1007/bf00722774
Orfescu, C., Pavelescu, C., Badila, M. (1990) An etch rate study on thermally annealed SiO2 films deposited in a TEOS-LPCVD system. Journal of Materials Science, 25. 1366-1368 doi:10.1007/bf00585451
Pavelescu, C., Cobianu, C. (1990) Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio. Journal of Materials Science Letters, 9 (2) 143-144 doi:10.1007/bf00727697
SHIBATA, MIYOKO, SUGAWARA, KATSURO (1975) ChemInform Abstract: DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS FILMS IN RELATION TO O2/SIH4+PH3 MOLE FRACTION. Chemischer Informationsdienst, 6 (13) doi:10.1002/chin.197513037
Vlahovici, N., Pavelescu, C., Kleps, I. (1991) The infrared absorption of antimony-doped SiO2 films chemically vapour deposited in the TEOS-SbCl5-O2 system at low temperature. Journal of Materials Science Letters, 10 (15) 920-921 doi:10.1007/bf00724782
Cobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334
SHIBATA, MIYOKO, YOSHIMI, TAKEO, SUGAWARA, KATSURO (1975) ChemInform Abstract: DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS FILMS IN RELATION TO PH3/SIH4+PH3 MOLE FRACTION. Chemischer Informationsdienst, 6 (13) doi:10.1002/chin.197513038
Pavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636
Pavelescu, C., Cobianu, C., Segal, E. (1985) Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditions. Journal of Materials Science Letters, 4 (10) 1280-1281 doi:10.1007/bf00723481
Pavelescu, C., Cobianu, C. (1988) A mechanism for the surface reaction between silane and oxygen at low temperature and correlations with the properties of the deposited SiO2 films. Journal of Materials Science Letters, 7 (10) 1107-1109 doi:10.1007/bf00720846
 
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