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Ramakrishna, K., Srivastava, O. N. (1987) Effect of hydrogenation on the electrical resistivity of LaNi5 films. Journal of Materials Science Letters, 6 (1) 15-16 doi:10.1007/bf01729413

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Reference TypeJournal (article/letter/editorial)
TitleEffect of hydrogenation on the electrical resistivity of LaNi5 films
JournalJournal of Materials Science Letters
AuthorsRamakrishna, K.Author
Srivastava, O. N.Author
Year1987 (January)Volume6
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01729413Search in ResearchGate
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Mindat Ref. ID16409989Long-form Identifiermindat:1:5:16409989:0
GUID0
Full ReferenceRamakrishna, K., Srivastava, O. N. (1987) Effect of hydrogenation on the electrical resistivity of LaNi5 films. Journal of Materials Science Letters, 6 (1) 15-16 doi:10.1007/bf01729413
Plain TextRamakrishna, K., Srivastava, O. N. (1987) Effect of hydrogenation on the electrical resistivity of LaNi5 films. Journal of Materials Science Letters, 6 (1) 15-16 doi:10.1007/bf01729413
In(1987, January) Journal of Materials Science Letters Vol. 6 (1) Springer Science and Business Media LLC

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Dutta, K., Srivastava, O. N. (1993) Synthesis, structural characterization and hydrogenation behaviour of the new hydrogen storage composite alloy La2Mg17-x wt% LaNi5. Journal of Materials Science, 28. 3457-3462 doi:10.1007/bf01159822
Srivastava, G. P., Tripathi, K. N., Sehgal, N. K. (1986) Effect of laser irradiation on the electrical properties of amorphous germanium films. Journal of Materials Science, 21. 2972-2976 doi:10.1007/bf00551518
Parthasarathy, G., Asokan, S. (1987) Effect of high pressure on the electrical resistivity of glassy oxygenated selenium. Journal of Materials Science Letters, 6 (3) 313-314 doi:10.1007/bf01729337
Sakaguchi, H., Nagai, H., Adachi, G., Shiokawa, J. (1985) The effect of hydrogen absorption on the electrical resistivities of SmCo5 and LaNi5 films. Journal of Materials Science Letters, 4 (3) 347-350 doi:10.1007/bf00719811
Rajora, O. S., Curzon, A. E. (1984) On the effect of substrate temperature, deposition rate and annealing on the electrical resistivity of thin yttrium films. Journal of Materials Science Letters, 3 (7) 627-628 doi:10.1007/bf00719631
Sharma, B. K., Jain, N., Srivastava, R. (1983) Strain gauge coefficient of resistivity of supported metallic films. Journal of Materials Science Letters, 2 (11) 685-687 doi:10.1007/bf00720402
Mandal, P., Dutta, K., Ramakrishna, K., Sapru, K., Srivastava, O.N. (1992) Synthesis, characterization and hydrogenation behaviour of Mg-ξwt.%FeTi(Mn) and La2Mg17—ξwt.%LaNi5—new hydrogen storage composite alloys. Journal of Alloys and Compounds, 184. 1-9 doi:10.1016/0925-8388(92)90450-n
Pal, Arun K., Chaudhuri, S. (1976) Effect of grain-boundary scattering on the electrical resistivity of indium films. Journal of Materials Science, 11. 872-876 doi:10.1007/bf00542304
Verma, K. K., Tiwari, R. S., Srivastava, O. N. (2005) Effect of annealing temperature on the structural-microstructural and electrical characteristics of thallium bearing HTSC films prepared by chemical spray pyrolysis technique. Bulletin of Materials Science, 28. 151-154 doi:10.1007/bf02704235
Islam, M. N., Mitra, S. K. (1987) Electrical properties of tellurium-doped gallium arsenide thin films. Journal of Materials Science Letters, 6 (2) 151-153 doi:10.1007/bf01728968
Parthasarathy, G., Ramakrishna, R., Asokan, S., Gopal, E. S. R. (1986) Effect of pressure on the electrical resistivity of bulk amorphous Al23Te77 alloy under various stages of crystallization. Journal of Materials Science Letters, 5 (8) 809-811 doi:10.1007/bf01730099
 
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