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Alemoush, Zaid, Tingsuwatit, Attasit, Li, Jing, Lin, Jingyu, Jiang, Hongxing (2023) Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy. Crystals, 13 (9) 1319 doi:10.3390/cryst13091319

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Reference TypeJournal (article/letter/editorial)
TitleProbing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy
JournalCrystals
AuthorsAlemoush, ZaidAuthor
Tingsuwatit, AttasitAuthor
Li, JingAuthor
Lin, JingyuAuthor
Jiang, HongxingAuthor
Year2023 (August 29)Volume13
Issue9
PublisherMDPI AG
DOIdoi:10.3390/cryst13091319Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16681346Long-form Identifiermindat:1:5:16681346:3
GUID0
Full ReferenceAlemoush, Zaid, Tingsuwatit, Attasit, Li, Jing, Lin, Jingyu, Jiang, Hongxing (2023) Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy. Crystals, 13 (9) 1319 doi:10.3390/cryst13091319
Plain TextAlemoush, Zaid, Tingsuwatit, Attasit, Li, Jing, Lin, Jingyu, Jiang, Hongxing (2023) Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy. Crystals, 13 (9) 1319 doi:10.3390/cryst13091319
In(2023, August) Crystals Vol. 13 (9) MDPI AG

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Alemoush, Z., Hossain, N. K., Tingsuwatit, A., Almohammad, M., Li, J., Lin, J. Y., Jiang, H. X. (2023) Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy. Applied Physics Letters, 122 (1) 12105 doi:10.1063/5.0134858
Almohammad, M., Tingsuwatit, A., Alemoush, Z., Li, J., Lin, J. Y., Jiang, H. X. (2023) Probing and controlling oxygen impurity diffusion in h-BN semi-bulk crystals. Applied Physics Letters, 123 (25) doi:10.1063/5.0164457
Alemoush, Z., Tingsuwatit, A., Maity, A., Li, J., Lin, J. Y., Jiang, H. X. (2024) Status of h-BN quasi-bulk crystals and high efficiency neutron detectors. Journal of Applied Physics, 135 (17) doi:10.1063/5.0179610
Somasundaram, G., Tingsuwatit, A., Alemoush, Z., Li, J., Lin, J. Y., Jiang, H. X. (2025) Transport properties of h-BN lateral devices. Applied Physics Letters, 126 (4). doi:10.1063/5.0241120
Hossain, N. K.; Somasundaram, G.; Alemoush, Z.; Li, J.; Lin, J. Y.; Jiang, H. X. (2025) Annealing effects on crystalline quality and device performance of ultrawide bandgap h-BN quasi-bulk crystals. Applied Physics Letters, 126 (20). doi:10.1063/5.0260647
Somasundaram, G.; Hossain, N. K.; Alemoush, Z.; Tingsuwatit, A.; Li, J.; Lin, J. Y.; Jiang, H. X. (2025) Development of millimeter-thick hexagonal boron nitride wafers and fast neutron detectors. Applied Physics Letters, 126 (21). doi:10.1063/5.0274262
Oshima, Ryuji, Ogura, Akio, Shoji, Yasushi, Makita, Kikuo, Ubukata, Akinori, Koseki, Shuuichi, Imaizumi, Mitsuru, Sugaya, Takeyoshi (2023) Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy. Crystals, 13 (3) 370 doi:10.3390/cryst13030370
Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, Ptak, Aaron (2018) III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Crystals, 9 (1) 3 doi:10.3390/cryst9010003
Oshima, Yuichi, Yoshida, Takehiro, Watanabe, Kazutoshi, Mishima, Tomoyoshi (2010) Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy. Journal of Crystal Growth, 312 (24). 3569-3573 doi:10.1016/j.jcrysgro.2010.09.036
Amilusik, M., Wlodarczyk, D., Suchocki, A., Bockowski, M. (2019) Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1390
Tuomisto, Filip (2022) Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals. Crystals, 12 (8) 1112 doi:10.3390/cryst12081112
 
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