Richter, Eberhard, Beyer, Franziska C., Zimmermann, Friederike, Gärtner, Günter, Irmscher, Klaus, Gamov, Ivan, Heitmann, Johannes, Weyers, Markus, Tränkle, Günther (2020) Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900129
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Growth and Properties of Intentionally Carbon‐Doped GaN Layers | ||
| Journal | Crystal Research and Technology | ||
| Authors | Richter, Eberhard | Author | |
| Beyer, Franziska C. | Author | ||
| Zimmermann, Friederike | Author | ||
| Gärtner, Günter | Author | ||
| Irmscher, Klaus | Author | ||
| Gamov, Ivan | Author | ||
| Heitmann, Johannes | Author | ||
| Weyers, Markus | Author | ||
| Tränkle, Günther | Author | ||
| Year | 2020 (February) | Volume | 55 |
| Issue | 2 | ||
| Publisher | Wiley | ||
| DOI | doi:10.1002/crat.201900129Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 16984966 | Long-form Identifier | mindat:1:5:16984966:7 |
| GUID | 0 | ||
| Full Reference | Richter, Eberhard, Beyer, Franziska C., Zimmermann, Friederike, Gärtner, Günter, Irmscher, Klaus, Gamov, Ivan, Heitmann, Johannes, Weyers, Markus, Tränkle, Günther (2020) Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900129 | ||
| Plain Text | Richter, Eberhard, Beyer, Franziska C., Zimmermann, Friederike, Gärtner, Günter, Irmscher, Klaus, Gamov, Ivan, Heitmann, Johannes, Weyers, Markus, Tränkle, Günther (2020) Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Crystal Research and Technology, 55 (2) doi:10.1002/crat.201900129 | ||
| In | (2020, February) Crystal Research & Technology Vol. 55 (2) | ||
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