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Zhao, Q.T., Mi, S.B., Jia, C.L., Urban, C., Sandow, C., Habicht, S., Mantl, S. (2009) Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface. Journal of Materials Research, 24 (1) 135-139 doi:10.1557/jmr.2009.0006

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface
JournalJournal of Materials Research
AuthorsZhao, Q.T.Author
Mi, S.B.Author
Jia, C.L.Author
Urban, C.Author
Sandow, C.Author
Habicht, S.Author
Mantl, S.Author
Year2009 (January)Volume24
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1557/jmr.2009.0006Search in ResearchGate
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Mindat Ref. ID17103653Long-form Identifiermindat:1:5:17103653:6
GUID0
Full ReferenceZhao, Q.T., Mi, S.B., Jia, C.L., Urban, C., Sandow, C., Habicht, S., Mantl, S. (2009) Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface. Journal of Materials Research, 24 (1) 135-139 doi:10.1557/jmr.2009.0006
Plain TextZhao, Q.T., Mi, S.B., Jia, C.L., Urban, C., Sandow, C., Habicht, S., Mantl, S. (2009) Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface. Journal of Materials Research, 24 (1) 135-139 doi:10.1557/jmr.2009.0006
In(2009, January) Journal of Materials Research Vol. 24 (1) Springer Science and Business Media LLC

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OKADA, E, NAKATSUKA, O, OIDA, S, SAKAI, A, ZAIMA, S, YASUDA, Y (2004) Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100). Applied Surface Science, 237. 150-155 doi:10.1016/s0169-4332(04)00980-8
Mi, S.B., Jia, C.L., Urban, K., Heeg, T., Schubert, J. (2006) Growth of CaxBa1−xNb2O6 thin films on MgO(100) by pulsed laser deposition. Journal of Crystal Growth, 291 (1). 243-248 doi:10.1016/j.jcrysgro.2006.02.039
Rudawski, N.G., Jones, K.S., Gwilliam, R. (2009) Stressed solid-phase epitaxial growth of (011) Si. Journal of Materials Research, 24 (2) 305-309 doi:10.1557/jmr.2009.0056
Hsu, H.F., Chan, H.Y., Chen, T.H., Wu, H.Y., Cheng, S.L., Wu, F.B. (2011) Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(100) systems. Applied Surface Science, 257. 7422-7426 doi:10.1016/j.apsusc.2011.02.108
Ridgway, M. C., Elliman, R. G., Williams, J. S. (1990) Ion beam induced epitaxial crystallization of NiSi2. Applied Physics Letters, 56 (21). 2117-2119 doi:10.1063/1.102989
Cherns, D., Hetherington, C. J. D., Humphreys, C. J. (1984) The atomic structure of the NiSi2-(001)Si interface. Philosophical Magazine A, 49 (1). 165-177 doi:10.1080/01418618408233436
Shiraki, Y., Ohshima, T., Ishizaka, A., Nakagawa, K. (1987) High quality NiSi2/Si epitaxial films grown by MBE. Journal of Crystal Growth, 81 (1). 476-482 doi:10.1016/0022-0248(87)90436-2
Rizzi, Angela, Förster, A., Lüth, H., Slijkerman, W. (1989) Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90369-1
Eaglesham, D. J., Kiely, C. J., Cherns, D., Missous, M. (1989) Electron diffraction from epitaxial crystals—a convergent-beam electron diffraction of the interface structure for NiSi2/Si and Al/GaAs. Philosophical Magazine A, 60 (2). 161-175 doi:10.1080/01418618908219279
Choi, H. S., Kim, W. S., Kim, J. C., Hur, N. H. (2002) Epitaxial growth of antiperovskite GaCMn3 film on perovskite LaAlO3 substrate. Journal of Materials Research, 17 (10) 2640-2643 doi:10.1557/jmr.2002.0383
Rizzi, Angela, Förster, A., Lüth, H., Slijkerman, W. (1989) Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures. Surface Science, 211. 620-629 doi:10.1016/0039-6028(89)90821-2
 
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