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Hultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E. (1988) Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition. Journal of Crystal Growth, 92 (3). 639-656 doi:10.1016/0022-0248(88)90048-6

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition
JournalJournal of Crystal Growth
AuthorsHultman, L.Author
Barnett, S.A.Author
Sundgren, J.-E.Author
Greene, J.E.Author
Year1988 (October)Volume92
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90048-6Search in ResearchGate
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Mindat Ref. ID2783188Long-form Identifiermindat:1:5:2783188:1
GUID0
Full ReferenceHultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E. (1988) Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition. Journal of Crystal Growth, 92 (3). 639-656 doi:10.1016/0022-0248(88)90048-6
Plain TextHultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E. (1988) Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition. Journal of Crystal Growth, 92 (3). 639-656 doi:10.1016/0022-0248(88)90048-6
In(1988, October) Journal of Crystal Growth Vol. 92 (3) Elsevier BV

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Hultman, L., Helmersson, U., Barnett, S. A., Sundgren, J.‐E., Greene, J. E. (1987) Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering. Journal of Applied Physics, 61 (2). 552-555 doi:10.1063/1.338257
Håkansson, G., Birch, J., Hultman, L., Ivanov, I.P., Sundgren, J.-E., Wallenberg, L.R. (1992) Ion irradiation effects during growth of Mo/V(001) superlattices by dual-target magnetron sputtering. Journal of Crystal Growth, 121 (3). 399-412 doi:10.1016/0022-0248(92)90150-h
Hultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014
Hultman, L., Sundgren, J.‐E., Greene, J. E., Bergstrom, D. B., Petrov, I. (1995) High‐flux low‐energy (≂20 eV) N+2ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation. Journal of Applied Physics, 78 (9). 5395-5403 doi:10.1063/1.359720
Adibi, F., Petrov, I., Greene, J. E., Hultman, L., Sundgren, J.‐E. (1993) Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputtering. Journal of Applied Physics, 73 (12). 8580-8589 doi:10.1063/1.353388
Hultman, L., Sundgren, J.‐E., Greene, J. E. (1989) Formation of polyhedral N2bubbles during reactive sputter deposition of epitaxial TiN(100) films. Journal of Applied Physics, 66 (2). 536-544 doi:10.1063/1.343570
Greene, J.E., Motooka, T., Sundgren, J.-E., Rockett, A., Gorbatkin, S., Lubben, D., Barnett, S.A. (1986) A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth. Journal of Crystal Growth, 79 (1). 19-32 doi:10.1016/0022-0248(86)90411-2
Ivanov, I., Hultman, L., Järrendahl, K., Mårtensson, P., Sundgren, J.‐E., Hjörvarsson, B., Greene, J. E. (1995) Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition. Journal of Applied Physics, 78 (9). 5721-5726 doi:10.1063/1.359632
Cadien, K.C., Greene, J.E. (1983) Crystal growth and controlled doping of epitaxial Ge films on (100)GaAs by sputter deposition. Journal of Crystal Growth, 61 (1). 15-22 doi:10.1016/0022-0248(83)90274-9
Valcheva, E., Birch, J., Persson, P. O. Å., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
Barnett, S.A., Greene, J.E. (1983) Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions. Surface Science, 128 (2). 401-416 doi:10.1016/s0039-6028(83)80040-5
 
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