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Hultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014

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Reference TypeJournal (article/letter/editorial)
TitleAr incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges
JournalApplied Physics Letters
AuthorsHultman, L.Author
Johansson, B.‐O.Author
Sundgren, J.‐E.Author
Markert, L. C.Author
Greene, J. E.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100014Search in ResearchGate
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Mindat Ref. ID8484228Long-form Identifiermindat:1:5:8484228:8
GUID0
Full ReferenceHultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014
Plain TextHultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Hultman, L., Helmersson, U., Barnett, S. A., Sundgren, J.‐E., Greene, J. E. (1987) Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering. Journal of Applied Physics, 61 (2). 552-555 doi:10.1063/1.338257
Greene, J. E., Sundgren, J.‐E., Hultman, L., Petrov, I., Bergstrom, D. B. (1995) Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering. Applied Physics Letters, 67 (20). 2928-2930 doi:10.1063/1.114845
Hultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E. (1988) Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition. Journal of Crystal Growth, 92 (3). 639-656 doi:10.1016/0022-0248(88)90048-6
Hultman, L., Sundgren, J.‐E., Greene, J. E. (1989) Formation of polyhedral N2bubbles during reactive sputter deposition of epitaxial TiN(100) films. Journal of Applied Physics, 66 (2). 536-544 doi:10.1063/1.343570
Broitman, E., Hellgren, N., Järrendahl, K., Johansson, M. P., Olafsson, S., Radnóczi, G., Sundgren, J.-E., Hultman, L. (2001) Electrical and optical properties of CNx(0⩽x⩽0.25) films deposited by reactive magnetron sputtering. Journal of Applied Physics, 89 (2). 1184-1190 doi:10.1063/1.1334370
Hultman, L., Sundgren, J.‐E., Greene, J. E., Bergstrom, D. B., Petrov, I. (1995) High‐flux low‐energy (≂20 eV) N+2ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation. Journal of Applied Physics, 78 (9). 5395-5403 doi:10.1063/1.359720
Ivanov, I., Hultman, L., Järrendahl, K., Mårtensson, P., Sundgren, J.‐E., Hjörvarsson, B., Greene, J. E. (1995) Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition. Journal of Applied Physics, 78 (9). 5721-5726 doi:10.1063/1.359632
Wahab, Q., Sardela, M. R., Hultman, L., Henry, A., Willander, M., Janzén, E., Sundgren, J.‐E. (1994) Growth of high‐quality 3C‐SiC epitaxial films on off‐axis Si(001) substrates at 850 °C by reactive magnetron sputtering. Applied Physics Letters, 65 (6). 725-727 doi:10.1063/1.112212
Valcheva, E., Birch, J., Persson, P. O. Å., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
Petrov, I., Mojab, E., Powell, R. C., Greene, J. E., Hultman, L., Sundgren, J.‐E. (1992) Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction. Applied Physics Letters, 60 (20). 2491-2493 doi:10.1063/1.106943
Barnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
 
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