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Barnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of ZrN on Si(100)
JournalApplied Physics Letters
AuthorsBarnett, S. A.Author
Hultman, L.Author
Sundgren, J.‐E.Author
Ronin, F.Author
Rohde, S.Author
Year1988 (August)Volume53
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.99891Search in ResearchGate
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Mindat Ref. ID8485506Long-form Identifiermindat:1:5:8485506:0
GUID0
Full ReferenceBarnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
Plain TextBarnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
In(1988, August) Applied Physics Letters Vol. 53 (5) AIP Publishing

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Hultman, L., Helmersson, U., Barnett, S. A., Sundgren, J.‐E., Greene, J. E. (1987) Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering. Journal of Applied Physics, 61 (2). 552-555 doi:10.1063/1.338257
Hultman, L., Johansson, B.‐O., Sundgren, J.‐E., Markert, L. C., Greene, J. E. (1988) Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2discharges. Applied Physics Letters, 53 (13). 1175-1177 doi:10.1063/1.100014
Knall, J., Sundgren, J.‐E., Greene, J. E., Rockett, A., Barnett, S. A. (1984) Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction. Applied Physics Letters, 45 (6). 689-691 doi:10.1063/1.95358
Hultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E. (1988) Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition. Journal of Crystal Growth, 92 (3). 639-656 doi:10.1016/0022-0248(88)90048-6
Ivanov, I., Hultman, L., Järrendahl, K., Mårtensson, P., Sundgren, J.‐E., Hjörvarsson, B., Greene, J. E. (1995) Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition. Journal of Applied Physics, 78 (9). 5721-5726 doi:10.1063/1.359632
Choi, C.‐H., Hultman, L., Ai, R., Barnett, S. A. (1990) Effect of nucleation mechanism on planar defects in InAs on Si (100). Applied Physics Letters, 57 (27). 2931-2933 doi:10.1063/1.103734
Hultman, L., Sundgren, J.‐E., Greene, J. E. (1989) Formation of polyhedral N2bubbles during reactive sputter deposition of epitaxial TiN(100) films. Journal of Applied Physics, 66 (2). 536-544 doi:10.1063/1.343570
Wahab, Q., Sardela, M. R., Hultman, L., Henry, A., Willander, M., Janzén, E., Sundgren, J.‐E. (1994) Growth of high‐quality 3C‐SiC epitaxial films on off‐axis Si(001) substrates at 850 °C by reactive magnetron sputtering. Applied Physics Letters, 65 (6). 725-727 doi:10.1063/1.112212
Choi, C.‐H., Barnett, S. A. (1989) Nucleation and epitaxial growth of InAs on Si (100) by ion‐assisted deposition. Applied Physics Letters, 55 (22). 2319-2321 doi:10.1063/1.102049
Palmstro/m, C. J., Tabatabaie, N., Allen, S. J. (1988) Epitaxial growth of ErAs on (100)GaAs. Applied Physics Letters, 53 (26). 2608-2610 doi:10.1063/1.100173
Blunier, S., Zogg, H., Weibel, H. (1988) Growth of lattice‐mismatched stacked epitaxial CaF2‐SrF2‐BaF2layers on (100) oriented Si substrates. Applied Physics Letters, 53 (16). 1512-1514 doi:10.1063/1.100432
 
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