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Choi, C.‐H., Hultman, L., Ai, R., Barnett, S. A. (1990) Effect of nucleation mechanism on planar defects in InAs on Si (100). Applied Physics Letters, 57 (27). 2931-2933 doi:10.1063/1.103734

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Reference TypeJournal (article/letter/editorial)
TitleEffect of nucleation mechanism on planar defects in InAs on Si (100)
JournalApplied Physics Letters
AuthorsChoi, C.‐H.Author
Hultman, L.Author
Ai, R.Author
Barnett, S. A.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103734Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492735Long-form Identifiermindat:1:5:8492735:8
GUID0
Full ReferenceChoi, C.‐H., Hultman, L., Ai, R., Barnett, S. A. (1990) Effect of nucleation mechanism on planar defects in InAs on Si (100). Applied Physics Letters, 57 (27). 2931-2933 doi:10.1063/1.103734
Plain TextChoi, C.‐H., Hultman, L., Ai, R., Barnett, S. A. (1990) Effect of nucleation mechanism on planar defects in InAs on Si (100). Applied Physics Letters, 57 (27). 2931-2933 doi:10.1063/1.103734
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Choi, C.‐H., Barnett, S. A. (1989) Nucleation and epitaxial growth of InAs on Si (100) by ion‐assisted deposition. Applied Physics Letters, 55 (22). 2319-2321 doi:10.1063/1.102049
Choi, C.-H., Ai, R., Barnett, S. (1991) Suppression of three-dimensional island nucleation during GaAs growth on Si(100). Physical Review Letters, 67 (20). 2826-2829 doi:10.1103/physrevlett.67.2826
Barnett, S. A., Hultman, L., Sundgren, J.‐E., Ronin, F., Rohde, S. (1988) Epitaxial growth of ZrN on Si(100). Applied Physics Letters, 53 (5). 400-402 doi:10.1063/1.99891
Mirkarimi, P. B., Hultman, L., Barnett, S. A. (1990) Enhanced hardness in lattice‐matched single‐crystal TiN/V0.6Nb0.4N superlattices. Applied Physics Letters, 57 (25). 2654-2656 doi:10.1063/1.104189
Tsai, H. L., Kao, Y. C. (1990) Effect of patterning on defect structure in GaAs grown on Si. Applied Physics Letters, 57 (3). 288-290 doi:10.1063/1.103716
Duncan, W. M., Matyi, R. J., Shichijo, H., Kao, Y.‐C., Liu, H.‐Y. (1990) Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si. Applied Physics Letters, 57 (16). 1631-1633 doi:10.1063/1.104070
Houghton, D. C. (1990) Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures. Applied Physics Letters, 57 (20). 2124-2126 doi:10.1063/1.103918
Kim, J. S., Jeon, P. E., Choi, J. C., Park, H. L., Mho, S. I., Kim, G. C. (2004) Warm-white-light emitting diode utilizing a single-phase full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphor. Applied Physics Letters, 84 (15). 2931-2933 doi:10.1063/1.1695441
Hull, R., Fischer‐Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. (1987) Effect of substrate surface structure on nucleation of GaAs on Si(100). Applied Physics Letters, 51 (21). 1723-1725 doi:10.1063/1.98556
Choi, C., Otsuka, N., Munns, G., Houdre, R., Morkoç, H., Zhang, S. L., Levi, D., Klein, M. V. (1987) Effect ofinsituandexsituannealing on dislocations in GaAs on Si substrates. Applied Physics Letters, 50 (15). 992-994 doi:10.1063/1.97956
Tiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H. (1990) Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer. Applied Physics Letters, 57 (11). 1108-1110 doi:10.1063/1.103506
 
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