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Lückerath, R., Tommack, P., Hertling, A., Koss, H.J., Balk, P., Jensen, K.F., Richter, W. (1988) CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3. Journal of Crystal Growth, 93 (1). 151-158 doi:10.1016/0022-0248(88)90520-9

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Reference TypeJournal (article/letter/editorial)
TitleCARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3
JournalJournal of Crystal Growth
AuthorsLückerath, R.Author
Tommack, P.Author
Hertling, A.Author
Koss, H.J.Author
Balk, P.Author
Jensen, K.F.Author
Richter, W.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90520-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2783508Long-form Identifiermindat:1:5:2783508:1
GUID0
Full ReferenceLückerath, R., Tommack, P., Hertling, A., Koss, H.J., Balk, P., Jensen, K.F., Richter, W. (1988) CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3. Journal of Crystal Growth, 93 (1). 151-158 doi:10.1016/0022-0248(88)90520-9
Plain TextLückerath, R., Tommack, P., Hertling, A., Koss, H.J., Balk, P., Jensen, K.F., Richter, W. (1988) CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3. Journal of Crystal Growth, 93 (1). 151-158 doi:10.1016/0022-0248(88)90520-9
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

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Monteil, Y., Favre, R., Raffin, P., Bouix, J., Vaille, M., Gibart, P. (1988) Raman investigations on AsH3 decomposition in MOVPE. Journal of Crystal Growth, 93 (1). 159-164 doi:10.1016/0022-0248(88)90521-0
Wisser, J., Czuprin, P., Grundmann, D., Balk, P., Waschbüsch, M., Lückerath, R., Richter, W. (1991) GaAs epitaxy using alternate pulses in a standard LP-MOVPE reactor. Journal of Crystal Growth, 107 (1). 111-115 doi:10.1016/0022-0248(91)90442-8
Richter, W., Kurpas, P., Lückerath, R., Motzkus, M., Waschbüsch, M. (1991) Gas phase studies of MOVPE by optical methods. Journal of Crystal Growth, 107 (1). 13-25 doi:10.1016/0022-0248(91)90429-9
Meyer, R., Grützmacher, D., Jürgensen, H., Balk, P. (1988) Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar. Journal of Crystal Growth, 93 (1). 285-291 doi:10.1016/0022-0248(88)90541-6
Colabella, J.M., Stall, R.A., Sorenson, C.T. (1988) The adsorption and subsequent oxidation of AsH3 and PH3 on activated carbon. Journal of Crystal Growth, 92 (1). 189-195 doi:10.1016/0022-0248(88)90449-6
Lee, Peter W., Omstead, Thomas R., McKenna, Donald R., Jensen, Klavs F. (1988) In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3. Journal of Crystal Growth, 93 (1). 134-142 doi:10.1016/0022-0248(88)90518-0
Kuech, T.F., Wang, P.-J., Tischler, M.A., Potemski, R., Scilla, G.J., Cardone, F. (1988) The control and modeling of doping profiles and transients in MOVPE growth. Journal of Crystal Growth, 93 (1). 624-630 doi:10.1016/0022-0248(88)90594-5
Brauers, A., Kayser, O., Kall, R., Heinecke, H., Balk, P., Hofmann, H. (1988) The use of organic As precursors in the low pressure MOCVD of GaAs. Journal of Crystal Growth, 93 (1). 7-14 doi:10.1016/0022-0248(88)90498-8
Nishizawa, Jun-ichi, Kurabayashi, Toru (1988) Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system. Journal of Crystal Growth, 93 (1). 98-107 doi:10.1016/0022-0248(88)90513-1
Yodo, Tokuo, Yamashita, Ken (1988) Thermal stability of ZnSe epilayer grown by MOVPE. Journal of Crystal Growth, 93 (1). 656-661 doi:10.1016/0022-0248(88)90599-4
Monteil, Y., Favre, R., Bekkaoui, A., Raffin, P., Bouix, J., Marcillat, J., Dutto, P. (1988) Raman spectroscopy and flow visualization studies of MOVPE reactors. Journal of Crystal Growth, 93 (1). 270-278 doi:10.1016/0022-0248(88)90539-8
 
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