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Andersson, J.Y., Westergren, U. (1988) Characterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption. Journal of Crystal Growth, 93 (1). 307-311 doi:10.1016/0022-0248(88)90544-1

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption
JournalJournal of Crystal Growth
AuthorsAndersson, J.Y.Author
Westergren, U.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90544-1Search in ResearchGate
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Mindat Ref. ID2783703Long-form Identifiermindat:1:5:2783703:4
GUID0
Full ReferenceAndersson, J.Y., Westergren, U. (1988) Characterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption. Journal of Crystal Growth, 93 (1). 307-311 doi:10.1016/0022-0248(88)90544-1
Plain TextAndersson, J.Y., Westergren, U. (1988) Characterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption. Journal of Crystal Growth, 93 (1). 307-311 doi:10.1016/0022-0248(88)90544-1
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

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Kasai, K., Komeno, J. (1988) Numerical analysis of heterointerface in AlGaAs/GaAs hemt structure grown by MOVPE. Journal of Crystal Growth, 93 (1). 900-904 doi:10.1016/0022-0248(88)90637-9
Irikawa, M., Murgatroyd, I.J., Ijichi, T., Matsumoto, N., Nakai, A., Kashiwa, S. (1988) Sharp interfaces in GaInAsP/InP single quantum wells grown by MOVPE. Journal of Crystal Growth, 93 (1). 370-375 doi:10.1016/0022-0248(88)90555-6
Veuhoff, E., Baumeister, H., Treichler, R. (1988) Silicon migration during MOVPE of AlGaAs/GaAs laser structures. Journal of Crystal Growth, 93 (1). 650-655 doi:10.1016/0022-0248(88)90598-2
Paska, Z.F., Andersson, J.Y., Lundqvist, L., Olsson, C.-O.A. (1991) Growth and characterization of AlGaAs/GaAs quantum well structures for the fabrication of long wavelength infrared detectors. Journal of Crystal Growth, 107 (1). 845-849 doi:10.1016/0022-0248(91)90568-p
Stutzler, F.J., Fujieda, S., Mizuta, M., Ishida, K. (1988) Direct observation of extended atomically flat islands at the heterointerfaces of OMVPE AlGaAs-GaAs single quantum wells. Journal of Crystal Growth, 93 (1). 934pp. doi:10.1016/0022-0248(88)90646-x
Wang, S.M., Andersson, T.G., Chen, W.Q., Södervall, U., Thordson, J. (1994) Growth and characterization of digital and compositionally graded AlGaAs/GaAs non-rectangular quantum wells. Journal of Crystal Growth, 135 (3). 455-462 doi:10.1016/0022-0248(94)90134-1
Fukunaga, Toshiaki, Takamori, Takeshi, Nakashima, Hisao (1987) Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE. Journal of Crystal Growth, 81 (1). 85-90 doi:10.1016/0022-0248(87)90370-8
Horikawa, H., Akiyama, M., Kawai, Y., Sakuta, M. (1990) GaInAsP grown on Si by MOVPE using GaAs/InP double buffer layers. Journal of Crystal Growth, 99 (1). 361-364 doi:10.1016/0022-0248(90)90544-u
Schmitz, D., Strauch, G., Knauf, J., Jürgensen, H., Heyen, M., Wolter, K. (1988) Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE. Journal of Crystal Growth, 93 (1). 312-317 doi:10.1016/0022-0248(88)90545-3
Yodo, Tokuo, Yamashita, Ken (1988) Thermal stability of ZnSe epilayer grown by MOVPE. Journal of Crystal Growth, 93 (1). 656-661 doi:10.1016/0022-0248(88)90599-4
Andersson, J. Y., Landgren, G. (1988) Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy. Journal of Applied Physics, 64 (8). 4123-4127 doi:10.1063/1.341322
 
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