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Schmitz, D., Strauch, G., Knauf, J., Jürgensen, H., Heyen, M., Wolter, K. (1988) Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE. Journal of Crystal Growth, 93 (1). 312-317 doi:10.1016/0022-0248(88)90545-3

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Reference TypeJournal (article/letter/editorial)
TitleLarge area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE
JournalJournal of Crystal Growth
AuthorsSchmitz, D.Author
Strauch, G.Author
Knauf, J.Author
Jürgensen, H.Author
Heyen, M.Author
Wolter, K.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90545-3Search in ResearchGate
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Mindat Ref. ID2783708Long-form Identifiermindat:1:5:2783708:9
GUID0
Full ReferenceSchmitz, D., Strauch, G., Knauf, J., Jürgensen, H., Heyen, M., Wolter, K. (1988) Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE. Journal of Crystal Growth, 93 (1). 312-317 doi:10.1016/0022-0248(88)90545-3
Plain TextSchmitz, D., Strauch, G., Knauf, J., Jürgensen, H., Heyen, M., Wolter, K. (1988) Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE. Journal of Crystal Growth, 93 (1). 312-317 doi:10.1016/0022-0248(88)90545-3
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

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Knauf, J., Schmitz, D., Strauch, G., Jürgensen, H., Heyen, M., Melas, A. (1988) Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE. Journal of Crystal Growth, 93 (1). 34-40 doi:10.1016/0022-0248(88)90502-7
Schmitz, D., Strauch, G., Jürgensen, H., Heyen, M. (1991) Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation. Journal of Crystal Growth, 107 (1). 188-191 doi:10.1016/0022-0248(91)90454-d
Woelk, E., Ermer, J., Strauch, G., Vijayakumar, P.S., Schmitz, D., Cavicchi, T., Jürgensen, H. (1994) Ultra-high uniformity large-area growth of GaAs/AlGaAs structures by low-pressure MOVPE. Journal of Crystal Growth, 145 (1). 972-973 doi:10.1016/0022-0248(94)91175-4
Meyer, R., Grützmacher, D., Jürgensen, H., Balk, P. (1988) Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar. Journal of Crystal Growth, 93 (1). 285-291 doi:10.1016/0022-0248(88)90541-6
Schmitz, D., Lengeling, G., Strauch, G., Hergeth, J., Jürgensen, H. (1992) GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells. Journal of Crystal Growth, 124 (1). 278-285 doi:10.1016/0022-0248(92)90472-u
Veuhoff, E., Baumeister, H., Treichler, R. (1988) Silicon migration during MOVPE of AlGaAs/GaAs laser structures. Journal of Crystal Growth, 93 (1). 650-655 doi:10.1016/0022-0248(88)90598-2
Engel, M., Bauer, R.K., Bimberg, D., Grützmacher, D., Jürgensen, H. (1988) Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE. Journal of Crystal Growth, 93 (1). 359-364 doi:10.1016/0022-0248(88)90553-2
Kaufmann, L.M.F., Heuken, M., Tilders, R., Heime, K., Jürgensen, H., Heyen, M. (1988) Safety aspects of MOVPE in research and development: An example. Journal of Crystal Growth, 93 (1). 279-284 doi:10.1016/0022-0248(88)90540-4
Kasai, K., Komeno, J. (1988) Numerical analysis of heterointerface in AlGaAs/GaAs hemt structure grown by MOVPE. Journal of Crystal Growth, 93 (1). 900-904 doi:10.1016/0022-0248(88)90637-9
Andersson, J.Y., Westergren, U. (1988) Characterization of MOVPE-grown AlGaAs/GaAs single quantum wells by intersubband infrared absorption. Journal of Crystal Growth, 93 (1). 307-311 doi:10.1016/0022-0248(88)90544-1
Grützmacher, D., Meyer, R., Zachau, M., Helgesen, P., Zrenner, A., Wolter, K., Jürgensen, H., Koch, F., Balk, P. (1988) LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells. Journal of Crystal Growth, 93 (1). 382-388 doi:10.1016/0022-0248(88)90557-x
 
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