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Li, G., Petravić, M., Jagadish, C. (1997) Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy. Journal of Crystal Growth, 173 (3). 302-306 doi:10.1016/s0022-0248(96)00810-x

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Reference TypeJournal (article/letter/editorial)
TitleElectrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy
JournalJournal of Crystal Growth
AuthorsLi, G.Author
Petravić, M.Author
Jagadish, C.Author
Year1997 (April)Volume173
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00810-xSearch in ResearchGate
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Mindat Ref. ID2832904Long-form Identifiermindat:1:5:2832904:6
GUID0
Full ReferenceLi, G., Petravić, M., Jagadish, C. (1997) Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy. Journal of Crystal Growth, 173 (3). 302-306 doi:10.1016/s0022-0248(96)00810-x
Plain TextLi, G., Petravić, M., Jagadish, C. (1997) Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy. Journal of Crystal Growth, 173 (3). 302-306 doi:10.1016/s0022-0248(96)00810-x
In(1997, April) Journal of Crystal Growth Vol. 173 (3) Elsevier BV

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Li, G., Jagadish, C. (1996) Confinement and concentration of electrons in Si δ-doped Al x Ga 1 − x As( x = 0 and 0.35) grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 167 (3). 421-428 doi:10.1016/0022-0248(96)00286-2
Li, G., Linnarsson, M., Jagadish, C. (1995) Zn δ-doped GaAs grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 154 (3). 231-239 doi:10.1016/0022-0248(95)00193-x
Li, G., Jagadish, C. (1997) Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C. Journal of Crystal Growth, 179 (3). 382-390 doi:10.1016/s0022-0248(97)00138-3
Passenberg, W., Schlaak, W. (1997) Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers. Journal of Crystal Growth, 173 (3). 266-270 doi:10.1016/s0022-0248(96)00848-2
Li, Shuwei, Jin, Yixin, Gao, Chunxiao, Jin, Zengsun (1997) Isotropic growth islands of Ga 0.16 In 0.84 As 0.80 Sb 0.20 epilayer grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 173 (3). 321-324 doi:10.1016/s0022-0248(96)00896-2
Leo, G., Lazzarini, L., Lovergine, N., Romanato, F., Drigo, A.V. (1997) Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 173 (3). 277-284 doi:10.1016/s0022-0248(96)00972-4
Li, G, Prince, K.E, Petravic, M, Chua, S.J, Jagadish, C (1998) Substrate orientation effect on Zn δ-doping in GaAs grown by metal organic vapour-phase epitaxy. Journal of Crystal Growth, 191 (3). 357-360 doi:10.1016/s0022-0248(98)00144-4
Li, G., Petravić, M., Jagadish, C. (1996) Very high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Journal of Applied Physics, 79 (7). 3554-3559 doi:10.1063/1.361377
Ito, Hiroshi, Yokoyama, Haruki (1997) Carbon doping in InAlAs grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 173 (3). 315-320 doi:10.1016/s0022-0248(96)00899-8
Nishino, Hironori, Nishijima, Yoshito (1997) Influence of step motion on hillock formation in CdTe(100) grown on GaAs(100) by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 173 (3). 330-335 doi:10.1016/s0022-0248(96)00782-8
Li, G., Petravić, M., Jagadish, C. (1995) Growth of Zn δ‐doped AlxGa1−xAs by low pressure metal organic vapor phase epitaxy. Journal of Applied Physics, 78 (5). 3546-3548 doi:10.1063/1.359930
 
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