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Li, G., Petravić, M., Jagadish, C. (1996) Very high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Journal of Applied Physics, 79 (7). 3554-3559 doi:10.1063/1.361377

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Reference TypeJournal (article/letter/editorial)
TitleVery high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor
JournalJournal of Applied Physics
AuthorsLi, G.Author
Petravić, M.Author
Jagadish, C.Author
Year1996 (April)Volume79
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.361377Search in ResearchGate
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Mindat Ref. ID5079084Long-form Identifiermindat:1:5:5079084:7
GUID0
Full ReferenceLi, G., Petravić, M., Jagadish, C. (1996) Very high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Journal of Applied Physics, 79 (7). 3554-3559 doi:10.1063/1.361377
Plain TextLi, G., Petravić, M., Jagadish, C. (1996) Very high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Journal of Applied Physics, 79 (7). 3554-3559 doi:10.1063/1.361377
In(1996, April) Journal of Applied Physics Vol. 79 (7) AIP Publishing

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Li, G., Petravić, M., Jagadish, C. (1995) Growth of Zn δ‐doped AlxGa1−xAs by low pressure metal organic vapor phase epitaxy. Journal of Applied Physics, 78 (5). 3546-3548 doi:10.1063/1.359930
Li, G., Petravić, M., Jagadish, C. (1997) Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy. Journal of Crystal Growth, 173 (3). 302-306 doi:10.1016/s0022-0248(96)00810-x
Hou, H. Q. (1997) Carbon doping and etching of AlxGa1−xAs (0⩽x⩽1) with carbon tetrachloride in metalorganic vapor phase epitaxy. Applied Physics Letters, 70 (26). 3600-3602 doi:10.1063/1.119245
Li, G., Jagadish, C., Johnston, M. B., Gal, M. (1996) Growth of Si and C δ‐doped nipi doping superlattices in GaAs by metal organic vapor phase epitaxy. Applied Physics Letters, 69 (27). 4218-4220 doi:10.1063/1.116991
Hobson, W. S., Harris, T. D., Abernathy, C. R., Pearton, S. J. (1991) High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor. Applied Physics Letters, 58 (1). 77-79 doi:10.1063/1.104450
Horita, M., Suzuki, M., Matsushima, Y., Utaka, K. (1993) Impurity doping in InP layer grown by metalorganic vapor‐phase epitaxy using tertiarybutylphosphine and organic doping sources. Journal of Applied Physics, 74 (7). 4737-4740 doi:10.1063/1.354342
Hashizume, Tamotsu, Hasegawa, Hideki, Ohno, Hideo (1990) Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs. Journal of Applied Physics, 68 (7). 3394-3400 doi:10.1063/1.346344
Olsthoorn, S. M., Bongers, M. M. G., Giling, L. J. (1994) High‐spatial‐resolution photoluminescence measurements on AlxGa1−xAs grown on a nonplanar substrate by metalorganic vapor phase epitaxy. Applied Physics Letters, 65 (15). 1952-1954 doi:10.1063/1.112827
Buydens, Luc, Demeester, Piet, Yu, ZongQiang, Van Daele, Peter (1992) High quality In0.15Ga0.85As/AlxGa1−xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 71 (7). 3249-3255 doi:10.1063/1.350971
Olsthoorn, S. M., Driessen, F. A. J. M., Giling, L. J., Frigo, D. M., Smit, C. J. (1992) Photoluminescence on high‐quality AlxGa1−xAs grown by metalorganic vapor‐phase epitaxy using alane bis(dimethylethylamine). Applied Physics Letters, 60 (1). 82-84 doi:10.1063/1.107382
Olsthoorn, S. M., Driessen, F. A. J. M., Giling, L. J. (1991) Excitonic photoluminescence spectra of AlxGa1−xAs grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (12). 1274-1276 doi:10.1063/1.104334
 
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