Tavernier, P.R, Margalith, T, Williams, J, Green, D.S, Keller, S, DenBaars, S.P, Mishra, U.K, Nakamura, S, Clarke, D.R (2004) The growth of N-face GaN by MOCVD: effect of Mg, Si, and In. Journal of Crystal Growth, 264 (1). 150-158 doi:10.1016/j.jcrysgro.2004.01.023
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | The growth of N-face GaN by MOCVD: effect of Mg, Si, and In | ||
Journal | Journal of Crystal Growth | ||
Authors | Tavernier, P.R | Author | |
Margalith, T | Author | ||
Williams, J | Author | ||
Green, D.S | Author | ||
Keller, S | Author | ||
DenBaars, S.P | Author | ||
Mishra, U.K | Author | ||
Nakamura, S | Author | ||
Clarke, D.R | Author | ||
Year | 2004 (March) | Volume | 264 |
Issue | 1 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2004.01.023Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2876475 | Long-form Identifier | mindat:1:5:2876475:3 |
GUID | 0 | ||
Full Reference | Tavernier, P.R, Margalith, T, Williams, J, Green, D.S, Keller, S, DenBaars, S.P, Mishra, U.K, Nakamura, S, Clarke, D.R (2004) The growth of N-face GaN by MOCVD: effect of Mg, Si, and In. Journal of Crystal Growth, 264 (1). 150-158 doi:10.1016/j.jcrysgro.2004.01.023 | ||
Plain Text | Tavernier, P.R, Margalith, T, Williams, J, Green, D.S, Keller, S, DenBaars, S.P, Mishra, U.K, Nakamura, S, Clarke, D.R (2004) The growth of N-face GaN by MOCVD: effect of Mg, Si, and In. Journal of Crystal Growth, 264 (1). 150-158 doi:10.1016/j.jcrysgro.2004.01.023 | ||
In | (2004, March) Journal of Crystal Growth Vol. 264 (1) Elsevier BV |
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