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Fichtenbaum, N.A., Mates, T.E., Keller, S., DenBaars, S.P., Mishra, U.K. (2008) Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 310 (6). 1124-1131 doi:10.1016/j.jcrysgro.2007.12.051

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Reference TypeJournal (article/letter/editorial)
TitleImpurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
JournalJournal of Crystal Growth
AuthorsFichtenbaum, N.A.Author
Mates, T.E.Author
Keller, S.Author
DenBaars, S.P.Author
Mishra, U.K.Author
Year2008 (March)Volume310
Issue6
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.12.051Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2893307Long-form Identifiermindat:1:5:2893307:0
GUID0
Full ReferenceFichtenbaum, N.A., Mates, T.E., Keller, S., DenBaars, S.P., Mishra, U.K. (2008) Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 310 (6). 1124-1131 doi:10.1016/j.jcrysgro.2007.12.051
Plain TextFichtenbaum, N.A., Mates, T.E., Keller, S., DenBaars, S.P., Mishra, U.K. (2008) Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 310 (6). 1124-1131 doi:10.1016/j.jcrysgro.2007.12.051
In(2008, March) Journal of Crystal Growth Vol. 310 (6) Elsevier BV

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Cruz, Samantha C., Keller, Stacia, Mates, Thomas E., Mishra, Umesh K., DenBaars, Steven P. (2009) Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 311 (15). 3817-3823 doi:10.1016/j.jcrysgro.2009.02.051
Fichtenbaum, N. A., Schaake, C., Mates, T. E., Cobb, C., Keller, S., DenBaars, S. P., Mishra, U. K. (2007) Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 91 (17). 172105pp. doi:10.1063/1.2800304
Tavernier, P.R, Margalith, T, Williams, J, Green, D.S, Keller, S, DenBaars, S.P, Mishra, U.K, Nakamura, S, Clarke, D.R (2004) The growth of N-face GaN by MOCVD: effect of Mg, Si, and In. Journal of Crystal Growth, 264 (1). 150-158 doi:10.1016/j.jcrysgro.2004.01.023
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Moran, B., Wu, F., Romanov, A.E., Mishra, U.K., Denbaars, S.P., Speck, J.S. (2004) Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer. Journal of Crystal Growth, 273 (1). 38-47 doi:10.1016/j.jcrysgro.2004.08.012
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Jang, Ho Won, Lee, Jung-Hee, Lee, Jong-Lam (2002) Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 80 (21). 3955-3957 doi:10.1063/1.1481782
 
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