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Dadgar, A., Oleynik, N., Forster, D., Deiter, S., Witek, H., Bläsing, J., Bertram, F., Krtschil, A., Diez, A., Christen, J., Krost, A. (2004) A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001). Journal of Crystal Growth, 267 (1). 140-144 doi:10.1016/j.jcrysgro.2004.03.028

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Reference TypeJournal (article/letter/editorial)
TitleA two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)
JournalJournal of Crystal Growth
AuthorsDadgar, A.Author
Oleynik, N.Author
Forster, D.Author
Deiter, S.Author
Witek, H.Author
Bläsing, J.Author
Bertram, F.Author
Krtschil, A.Author
Diez, A.Author
Christen, J.Author
Krost, A.Author
Year2004 (June)Volume267
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2004.03.028Search in ResearchGate
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Mindat Ref. ID2877204Long-form Identifiermindat:1:5:2877204:4
GUID0
Full ReferenceDadgar, A., Oleynik, N., Forster, D., Deiter, S., Witek, H., Bläsing, J., Bertram, F., Krtschil, A., Diez, A., Christen, J., Krost, A. (2004) A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001). Journal of Crystal Growth, 267 (1). 140-144 doi:10.1016/j.jcrysgro.2004.03.028
Plain TextDadgar, A., Oleynik, N., Forster, D., Deiter, S., Witek, H., Bläsing, J., Bertram, F., Krtschil, A., Diez, A., Christen, J., Krost, A. (2004) A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001). Journal of Crystal Growth, 267 (1). 140-144 doi:10.1016/j.jcrysgro.2004.03.028
In(2004, June) Journal of Crystal Growth Vol. 267 (1) Elsevier BV

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Dadgar, A., Oleynik, N., Bläsing, J., Deiter, S., Forster, D., Bertram, F., Diez, A., Seip, M., Greiling, A., Christen, J., Krost, A. (2004) Heteroepitaxy and nitrogen doping of high-quality ZnO. Journal of Crystal Growth, 272 (1). 800-804 doi:10.1016/j.jcrysgro.2004.08.030
Krost, A., Christen, J., Oleynik, N., Dadgar, A., Deiter, S., Bläsing, J., Krtschil, A., Forster, D., Bertram, F., Diez, A. (2004) Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy. Applied Physics Letters, 85 (9). 1496-1498 doi:10.1063/1.1785871
Oleynik, N., Adam, M., Krtschil, A., Bläsing, J., Dadgar, A., Bertram, F., Forster, D., Diez, A., Greiling, A., Seip, M., Christen, J., Krost, A. (2003) Metalorganic chemical vapor phase deposition of ZnO with different O-precursors. Journal of Crystal Growth, 248. 14-19 doi:10.1016/s0022-0248(02)01879-1
Bertram, F., Forster, D., Christen, J., Oleynik, N., Dadgar, A., Krost, A. (2004) Microscopic spatial distribution of bound excitons in high-quality ZnO. Journal of Crystal Growth, 272 (1). 785-788 doi:10.1016/j.jcrysgro.2004.08.036
Heinze, S., Krtschil, A., Bläsing, J., Hempel, T., Veit, P., Dadgar, A., Christen, J., Krost, A. (2007) Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode. Journal of Crystal Growth, 308 (1). 170-175 doi:10.1016/j.jcrysgro.2007.07.024
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
Dadgar, A., Krost, A., Christen, J., Bastek, B., Bertram, F., Krtschil, A., Hempel, T., Bläsing, J., Haboeck, U., Hoffmann, A. (2006) MOVPE growth of high-quality AlN. Journal of Crystal Growth, 297 (2). 306-310 doi:10.1016/j.jcrysgro.2006.09.046
Oleynik, Nikolay, Dadgar, Armin, Bläsing, Jürgen, Adam, Marco, Krtschil, André, Forster, Daniel, Bertram, Frank, Diez, Anette, Seip, Markus, Greiling, Arnd, Christen, Jürgen, Krost, Alois (2003) Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor. Japanese Journal of Applied Physics, 42. 7474-7477 doi:10.1143/jjap.42.7474
Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, I., Krtschil, A., Diez, A., Kaluza, A., Modlich, A., Kamp, M., Christen, J., Ponce, F.A., Kohn, E., Krost, A. (2003) MOVPE growth of GaN on Si(111) substrates. Journal of Crystal Growth, 248. 556-562 doi:10.1016/s0022-0248(02)01894-8
Oleynik, N., Dadgar, A., Christen, J., Bl�sing, J., Adam, M., Riemann, T., Diez, A., Greiling, A., Seip, M., Krost, A. (2002) Growth of ZnO Layers by Metal Organic Chemical Vapor Phase Epitaxy. physica status solidi (a), 192 (1). 189-194 doi:10.1002/1521-396x(200207)192:1<189::aid-pssa189>3.0.co;2-x
Schulze, F., Dadgar, A., Bläsing, J., Krost, A. (2004) GaN heteroepitaxy on Si(001). Journal of Crystal Growth, 272 (1). 496-499 doi:10.1016/j.jcrysgro.2004.08.065
 
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