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Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy
JournalJournal of Crystal Growth
AuthorsSchulze, F.Author
Dadgar, A.Author
Bläsing, J.Author
Hempel, T.Author
Diez, A.Author
Christen, J.Author
Krost, A.Author
Year2006 (April)Volume289
Issue2
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.12.073Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2885320Long-form Identifiermindat:1:5:2885320:6
GUID0
Full ReferenceSchulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
Plain TextSchulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
In(2006, April) Journal of Crystal Growth Vol. 289 (2) Elsevier BV

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Heinze, S., Krtschil, A., Bläsing, J., Hempel, T., Veit, P., Dadgar, A., Christen, J., Krost, A. (2007) Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode. Journal of Crystal Growth, 308 (1). 170-175 doi:10.1016/j.jcrysgro.2007.07.024
Schulze, F., Dadgar, A., Bläsing, J., Diez, A., Krost, A. (2006) Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters, 88 (12). 121114pp. doi:10.1063/1.2188383
Reiher, F., Dadgar, A., Bläsing, J., Wieneke, M., Krost, A. (2010) Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces. Journal of Crystal Growth, 312 (2). 180-184 doi:10.1016/j.jcrysgro.2009.10.032
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Schulze, F., Dadgar, A., Bläsing, J., Krost, A. (2004) Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001). Applied Physics Letters, 84 (23). 4747-4749 doi:10.1063/1.1760214
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