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Siche, D., Rost, H.-J., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of GaN crystals from chlorine-free gas phase. Journal of Crystal Growth, 310 (5). 916-919 doi:10.1016/j.jcrysgro.2007.11.135

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of GaN crystals from chlorine-free gas phase
JournalJournal of Crystal Growth
AuthorsSiche, D.Author
Rost, H.-J.Author
Böttcher, K.Author
Gogova, D.Author
Fornari, R.Author
Year2008 (March)Volume310
Issue5
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.11.135Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2893202Long-form Identifiermindat:1:5:2893202:6
GUID0
Full ReferenceSiche, D., Rost, H.-J., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of GaN crystals from chlorine-free gas phase. Journal of Crystal Growth, 310 (5). 916-919 doi:10.1016/j.jcrysgro.2007.11.135
Plain TextSiche, D., Rost, H.-J., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of GaN crystals from chlorine-free gas phase. Journal of Crystal Growth, 310 (5). 916-919 doi:10.1016/j.jcrysgro.2007.11.135
In(2008, March) Journal of Crystal Growth Vol. 310 (5) Elsevier BV

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Rost, H.-J., Siche, D., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of single crystalline GaN from chlorine-free gas phase. physica status solidi (c), 5 (6). 1543-1546 doi:10.1002/pssc.200778463
Jacobs, K., Siche, D., Klimm, D., Rost, H.-J., Gogova, D. (2010) Pseudohalide vapour growth of thick GaN layers. Journal of Crystal Growth, 312 (6). 750-755 doi:10.1016/j.jcrysgro.2009.12.055
Siche, D., Gogova, D., Lehmann, S., Fizia, T., Fornari, R., Andrasch, M., Pipa, A., Ehlbeck, J. (2011) PVT growth of GaN bulk crystals. Journal of Crystal Growth, 318 (1). 406-410 doi:10.1016/j.jcrysgro.2010.10.030
Rost, H.-J., Schmidbauer, M., Siche, D., Fornari, R. (2006) Polarity- and orientation-related defect distribution in 4H-SiC single crystals. Journal of Crystal Growth, 290 (1). 137-143 doi:10.1016/j.jcrysgro.2005.12.109
Rost, H.-J., Siche, D., Müller, R., Gogova, D., Schulz, T., Albrecht, M., Fornari, R. (2007) Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique. physica status solidi (c), 4 (7). 2219-2222 doi:10.1002/pssc.200674722
Rost, H.-J., Siche, D., Gogova, D., Albrecht, M., Jacobs, K., Fornari, R. (2009) The role of carbon in transport processes during PVT growth of bulk GaN. physica status solidi (c), 6 (6). 1484-1487 doi:10.1002/pssc.200881523
Klimm, D., Ganschow, S., Schulz, D., Fornari, R. (2008) The growth of ZnO crystals from the melt. Journal of Crystal Growth, 310 (12). 3009-3013 doi:10.1016/j.jcrysgro.2008.02.027
Ashraf, H., Sridhara Rao, D.V., Gogova, D., Siche, D., Fornari, R., Humphreys, C.J., Hageman, P.R. (2010) Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Journal of Crystal Growth, 312 (4). 595-600 doi:10.1016/j.jcrysgro.2009.11.043
Hermann, M., Gogova, D., Siche, D., Schmidbauer, M., Monemar, B., Stutzmann, M., Eickhoff, M. (2006) Nearly stress-free substrates for GaN homoepitaxy. Journal of Crystal Growth, 293 (2). 462-468 doi:10.1016/j.jcrysgro.2006.05.058
Rost, H.-J., Doerschel, J., Irmscher, K., Roßberg, M., Schulz, D., Siche, D. (2005) Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.018
Rost, H.-J., Dolle, J., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. (2001) Growth related distribution of secondary phase inclusions in 6H–SiC single crystals. Journal of Crystal Growth, 225 (2). 317-321 doi:10.1016/s0022-0248(01)00885-5
 
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