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Rost, H.-J., Siche, D., Müller, R., Gogova, D., Schulz, T., Albrecht, M., Fornari, R. (2007) Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique. physica status solidi (c), 4 (7). 2219-2222 doi:10.1002/pssc.200674722

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Reference TypeJournal (article/letter/editorial)
TitleInvestigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique
Journalphysica status solidi (c)
AuthorsRost, H.-J.Author
Siche, D.Author
Müller, R.Author
Gogova, D.Author
Schulz, T.Author
Albrecht, M.Author
Fornari, R.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674722Search in ResearchGate
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Mindat Ref. ID5114512Long-form Identifiermindat:1:5:5114512:3
GUID0
Full ReferenceRost, H.-J., Siche, D., Müller, R., Gogova, D., Schulz, T., Albrecht, M., Fornari, R. (2007) Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique. physica status solidi (c), 4 (7). 2219-2222 doi:10.1002/pssc.200674722
Plain TextRost, H.-J., Siche, D., Müller, R., Gogova, D., Schulz, T., Albrecht, M., Fornari, R. (2007) Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique. physica status solidi (c), 4 (7). 2219-2222 doi:10.1002/pssc.200674722
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Rost, H.-J., Siche, D., Gogova, D., Albrecht, M., Jacobs, K., Fornari, R. (2009) The role of carbon in transport processes during PVT growth of bulk GaN. physica status solidi (c), 6 (6). 1484-1487 doi:10.1002/pssc.200881523
Gogova, D., Rudko, G. Yu., Siche, D., Albrecht, M., Irmscher, K., Rost, H.-J., Fornari, R. (2011) A new approach to grow C-doped GaN thick epitaxial layers. physica status solidi (c), 8 (7). 2120-2122 doi:10.1002/pssc.201001005
Rost, H.-J., Siche, D., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of single crystalline GaN from chlorine-free gas phase. physica status solidi (c), 5 (6). 1543-1546 doi:10.1002/pssc.200778463
Gogova, D., Siche, D., Kwasniewski, A., Schmidbauer, M., Fornari, R., Hemmingsson, C., Yakimova, R., Monemar, B. (2010) HVPE GaN substrates: growth and characterization. physica status solidi (c), 7 (7). 1756-1759 doi:10.1002/pssc.200983451
Gogova, D., Rudko, G., Siche, D. (2012) Growth and structural, optical and electrical properties study of bulk GaN. physica status solidi (c), 9 (3). 1048-1052 doi:10.1002/pssc.201100799
Siche, D., Rost, H.-J., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of GaN crystals from chlorine-free gas phase. Journal of Crystal Growth, 310 (5). 916-919 doi:10.1016/j.jcrysgro.2007.11.135
Siche, D., Gogova, D., Lehmann, S., Fizia, T., Fornari, R., Andrasch, M., Pipa, A., Ehlbeck, J. (2011) PVT growth of GaN bulk crystals. Journal of Crystal Growth, 318 (1). 406-410 doi:10.1016/j.jcrysgro.2010.10.030
Gogova, D., Albrecht, M., Remmele, T., Irmscher, K., Siche, D., Rost, H.‐J., Schmidbauer, M., Fornari, R., Yakimova, R. (2009) Microscopic lateral overgrowth by physical vapour transport of GaN on self‐organized diamond‐like carbon masks. Crystal Research and Technology, 44 (10) 1078-1082 doi:10.1002/crat.200900526
Irmscher, K., Albrecht, M., Heimbrodt, B., Naumann, M., Remmele, T., Schulz, D., Schulz, T., Fornari, R. (2009) Coloration of zinc oxide crystals originating from particle plasmons. physica status solidi (c), 6 (12). 2658-2660 doi:10.1002/pssc.200982545
Kallinger, B., Meissner, E., Seng, D., Sun, G., Hussy, S., Friedrich, J., Müller, G. (2007) Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry. physica status solidi (c), 4 (7). 2264-2267 doi:10.1002/pssc.200674840
Schulz, D., Wagner, G., Dolle, J., Irmscher, K., Müller, T., Rost, H.-J., Siche, D., Wollweber, J. (1999) Impurity incorporation during sublimation growth of 6H bulk SiC. Journal of Crystal Growth, 198. 1024-1027 doi:10.1016/s0022-0248(98)01038-0
 
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