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Rost, H.-J., Menzel, R., Luedge, A., Riemann, H. (2012) Float-Zone silicon crystal growth at reduced RF frequencies. Journal of Crystal Growth, 360. 43-46 doi:10.1016/j.jcrysgro.2012.03.001

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Reference TypeJournal (article/letter/editorial)
TitleFloat-Zone silicon crystal growth at reduced RF frequencies
JournalJournal of Crystal Growth
AuthorsRost, H.-J.Author
Menzel, R.Author
Luedge, A.Author
Riemann, H.Author
Year2012 (December)Volume360
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2012.03.001Search in ResearchGate
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Mindat Ref. ID2904192Long-form Identifiermindat:1:5:2904192:3
GUID0
Full ReferenceRost, H.-J., Menzel, R., Luedge, A., Riemann, H. (2012) Float-Zone silicon crystal growth at reduced RF frequencies. Journal of Crystal Growth, 360. 43-46 doi:10.1016/j.jcrysgro.2012.03.001
Plain TextRost, H.-J., Menzel, R., Luedge, A., Riemann, H. (2012) Float-Zone silicon crystal growth at reduced RF frequencies. Journal of Crystal Growth, 360. 43-46 doi:10.1016/j.jcrysgro.2012.03.001
In(2012) Journal of Crystal Growth Vol. 360. Elsevier BV

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Menzel, R., Rost, A., Luedge, A., Riemann, H. (2011) Influence of reduced working frequencies on the floating‐zone growth of silicon single crystals. Crystal Research and Technology, 46 (10) 1003-1009 doi:10.1002/crat.201100230
Rost, H.‐J., Luedge, A., Riemann, H., Kirscht, F., Schulze, F.‐W. (2012) Float zone (FZ) silicon: A potential material for advanced commercial solar cells?. Crystal Research and Technology, 47 (3) 273-278 doi:10.1002/crat.201100534
Rost, H.-J., Buchovska, I., Dadzis, K., Juda, U., Renner, M., Menzel, R. (2020) Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method. Journal of Crystal Growth, 552. 125842pp. doi:10.1016/j.jcrysgro.2020.125842
Menzel, Robert, Rost, Hans-Joachim, Kießling, Frank M., Sylla, Lamine (2019) Float-zone growth of silicon crystals using large-area seeding. Journal of Crystal Growth, 515. 32-36 doi:10.1016/j.jcrysgro.2019.02.061
Wünscher, Michael, Lüdge, Anke, Riemann, Helge (2011) Growth angle and melt meniscus of the RF-heated floating zone in silicon crystal growth. Journal of Crystal Growth, 314 (1). 43-47 doi:10.1016/j.jcrysgro.2010.11.101
Rudevics, A., Muiznieks, A., Riemann, H., Luedge, A., Ratnieks, G., von Ammon, W. (2005) Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.068
Dold, P. (2004) Analysis of microsegregation in RF-heated float zone growth of silicon—comparison to the radiation-heated process. Journal of Crystal Growth, 261 (1). 1-10 doi:10.1016/j.jcrysgro.2003.08.073
Hermann, R., Wendrock, H., Rodan, S., Rößler, U.K., Blum, C.G.F., Wurmehl, S., Büchner, B. (2013) Single crystal growth of antiferromagnetic Mn3Si by a two-phase RF floating-zone method. Journal of Crystal Growth, 363. 1-6 doi:10.1016/j.jcrysgro.2012.09.029
Higuchi, M., Kodaira, K., Urata, Y., Wada, S., Machida, H. (2004) Float zone growth and spectroscopic characterization of Tm:GdVO4 single crystals. Journal of Crystal Growth, 265 (3). 487-493 doi:10.1016/j.jcrysgro.2004.02.018
Larsen, T.L., Jensen, L., Lüdge, A., Riemann, H., Lemke, H. (2001) Numerical simulation of point defect transport in floating-zone silicon single crystal growth. Journal of Crystal Growth, 230 (1). 300-304 doi:10.1016/s0022-0248(01)01320-3
Plāte, Matīss, Dadzis, Kaspars, Krauze, Armands, Menzel, Robert, Virbulis, Jānis (2019) Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth. Journal of Crystal Growth, 521. 46-49 doi:10.1016/j.jcrysgro.2019.05.034
 
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