Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael (2016) Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Journal of Crystal Growth, 452. 39-43 doi:10.1016/j.jcrysgro.2015.12.028
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method | ||
| Journal | Journal of Crystal Growth | ||
| Authors | Guo, Jianqiu | Author | |
| Yang, Yu | Author | ||
| Wu, Fangzhen | Author | ||
| Sumakeris, Joe | Author | ||
| Leonard, Robert | Author | ||
| Goue, Ouloide | Author | ||
| Raghothamachar, Balaji | Author | ||
| Dudley, Michael | Author | ||
| Year | 2016 (October) | Volume | 452 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.jcrysgro.2015.12.028Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 2912165 | Long-form Identifier | mindat:1:5:2912165:4 |
| GUID | 0 | ||
| Full Reference | Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael (2016) Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Journal of Crystal Growth, 452. 39-43 doi:10.1016/j.jcrysgro.2015.12.028 | ||
| Plain Text | Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael (2016) Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Journal of Crystal Growth, 452. 39-43 doi:10.1016/j.jcrysgro.2015.12.028 | ||
| In | (2016) Journal of Crystal Growth Vol. 452. Elsevier BV | ||
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