Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, Hansen, Darren (2016) Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers. Journal of Crystal Growth, 452. 35-38 doi:10.1016/j.jcrysgro.2016.01.013
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers | ||
| Journal | Journal of Crystal Growth | ||
| Authors | Yang, Yu | Author | |
| Guo, Jianqiu | Author | ||
| Goue, Ouloide | Author | ||
| Raghothamachar, Balaji | Author | ||
| Dudley, Michael | Author | ||
| Chung, Gil | Author | ||
| Sanchez, Edward | Author | ||
| Quast, Jeff | Author | ||
| Manning, Ian | Author | ||
| Hansen, Darren | Author | ||
| Year | 2016 (October) | Volume | 452 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.jcrysgro.2016.01.013Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 2912195 | Long-form Identifier | mindat:1:5:2912195:5 |
| GUID | 0 | ||
| Full Reference | Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, Hansen, Darren (2016) Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers. Journal of Crystal Growth, 452. 35-38 doi:10.1016/j.jcrysgro.2016.01.013 | ||
| Plain Text | Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, Hansen, Darren (2016) Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers. Journal of Crystal Growth, 452. 35-38 doi:10.1016/j.jcrysgro.2016.01.013 | ||
| In | (2016) Journal of Crystal Growth Vol. 452. Elsevier BV | ||
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