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Lanius, M., Kampmeier, J., Kölling, S., Mussler, G., Koenraad, P.M., Grützmacher, D. (2016) Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy. Journal of Crystal Growth, 453. 158-162 doi:10.1016/j.jcrysgro.2016.08.016

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Reference TypeJournal (article/letter/editorial)
TitleTopography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy
JournalJournal of Crystal Growth
AuthorsLanius, M.Author
Kampmeier, J.Author
Kölling, S.Author
Mussler, G.Author
Koenraad, P.M.Author
Grützmacher, D.Author
Year2016 (November)Volume453
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.08.016Search in ResearchGate
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Mindat Ref. ID2912358Long-form Identifiermindat:1:5:2912358:2
GUID0
Full ReferenceLanius, M., Kampmeier, J., Kölling, S., Mussler, G., Koenraad, P.M., Grützmacher, D. (2016) Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy. Journal of Crystal Growth, 453. 158-162 doi:10.1016/j.jcrysgro.2016.08.016
Plain TextLanius, M., Kampmeier, J., Kölling, S., Mussler, G., Koenraad, P.M., Grützmacher, D. (2016) Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy. Journal of Crystal Growth, 453. 158-162 doi:10.1016/j.jcrysgro.2016.08.016
In(2016) Journal of Crystal Growth Vol. 453. Elsevier BV

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